Population Studies and Molecular Mechanisms of Human Radioadaptive Capabilities: Is It Time to Rethink Radiation Safety Standards?

The evolution of man on Earth took place under conditions of constant exposure to background ionizing radiation (IR). From this point of view, it would be reasonable to hypothesize the existence of adaptive mechanisms that enable the human organism to safely interact with IR at levels approximating long-term natural background levels. In some situations, the successful operation of molecular mechanisms of protection against IR is observed at values significantly exceeding the natural background level, for example, in cancer cells.

Hearing Sensitivity to Gliding Rippled Spectra in Hearing-Impaired Listeners.

Objectives: Sensitivity to the gliding of ripples in rippled-spectrum signals was measured in both normal-hearing and hearing-impaired listeners.

Methods: The test signal was a 2 oct wide rippled noise centered at 2 kHz, with the ripples gliding downward along the frequency scale. Both the gliding velocity and ripple density were frequency-proportional across the signal band.

Monaural and dichotic forward masking in the dolphin's auditory system.

Short-latency auditory-evoked potentials (AEPs) were recorded non-invasively in the bottlenose dolphin Tursiops truncatus. The stimuli were two sound clicks that were played either monaurally (both clicks to one and the same acoustic window) or dichotically (the leading stimulus (masker) to one acoustic window and the delayed stimulus (test) to the other window). The ratio of the levels of the two stimuli was 0, 10, or 20 dB (at 10 and 20 dB, the leading stimulus was of a higher level).

Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn.

GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs' thicknesses.

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters.

This article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN barrier layers, which were grown by plasma-assisted molecular-beam epitaxy in a wide range of gallium and activated nitrogen flux ratios (Ga/N*) on -sapphire substrates. An increase in the Ga/N* ratio from 1.