Broadband silicon grating couplers with high efficiency and a robust design.

A record-high efficiency and bandwidth for a fiber-to-chip grating coupler have been achieved with a robust design and cost-effective fabrication on a silicon-on-insulator platform. The design optimization involves the usual geometrical parameters, period, and fill factor, and a mode matching for the fiber output and grating. The measured coupling efficiency for TE polarization and 1 dB bandwidth are -2.

Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO multilayers.

This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO multilayers. Doped SiO/SiO multilayers with different P contents have been prepared by co-evaporation and subsequently annealed at different temperatures up to 1100 °C. The sample structure and the localization of P atoms were both studied at the nanoscale by scanning transmission electron microscopy and atom probe tomography.

Single-walled carbon nanotube membranes as non-reflective substrates for nanophotonic applications.

We demonstrate that single-walled carbon nanotube (SWCNT) membranes can be successfully utilized as nanometer-thick substrates for enhanced visualization and facilitated study of individual nanoparticles. As model objects, we transfer optically resonant 200 nm silicon nanoparticles onto pristine and ethanol-densified SWCNT membranes by the femtosecond laser printing method. We image nanoparticles by scanning electron and bright-field optical microscopy, and characterize by linear and Raman scattering spectroscopy.

Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth.

Successful direct route production of silicon nanostructures from diatomaceous earth (DE) on a single crystalline silicon wafer via the magnesiothermic reduction reaction is reported. The formed porous coating of 6 µm overall thickness contains silicon as the majority phase along with minor traces of Mg, as evident from SEM-EDS and the Focused Ion Beam (FIB) analysis. Raman peaks of silicon at 519 cm and 925 cm were found in both the film and wafer substrate, and significant intensity variation was observed, consistent with the SEM observation of the directly formed silicon nanoflake layer.

Plasmon induced modification of silicon nanocrystals photoluminescence in presence of gold nanostripes.

We report on the results of theoretical and experimental studies of photoluminescense of silicon nanocrystals in the proximity to plasmonic modes of different types. In the studied samples, the type of plasmonic mode is determined by the filling ratio of a one-dimensional array of gold stripes which covers the thin film with silicon nanocrystals on a quartz substrate. We analyze the extinction, photoluminesce spectra and decay kinetics of silicon nanocrystals and show that the incident and emitted light is coupled to the corresponding plasmonic mode.