Analysis and Control of RRAM Overshoot Current.

To combat the large variability problem in RRAM, current compliance elements are commonly used to limit the in-rush current during the forming operation. Regardless of the compliance element (1R-1R or 1T-1R), some degree of current overshoot is unavoidable. The peak value of the overshoot current is often used as a predictive metric of the filament characteristics and is linked to the parasitic capacitance of the test structure.

Parasitic engineering for RRAM control.

The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing the parasitic capacitance using highly integrated 1T-1R or 1R-1R device structures. While this is readily achievable in single device test structures, it poses an intricate design constraint for memory array designs.

Total Ionizing Dose Effects on TiN/Ti/HfO/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance.

We observe a gamma-irradiation induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects which are directly involved in the transport mechanisms within these devices. The EDMR response has an isotropic g-value of 2.

Impact of RRAM Read Fluctuations on the Program-Verify Approach.

The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming.

Rapid and Accurate C-V Measurements.

We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the metal-oxide-semiconductor (MOS) capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to non-ideal behavior of real measurement systems.