Publications by authors named "D L Dheeraj"

Poisoning is a significant contributor to mortality and morbidity throughout the world, and one of the most common pesticide poisonings is organophosphates, followed by phosphides. Ingestion of aluminum phosphide can induce severe gastrointestinal irritation leading to hemorrhage and ulcerations. Gastrointestinal ischemia, gangrene, and hemorrhage in the ileum secondary to aluminum phosphide poisoning have not been reported in the literature.

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Introduction Diabetes mellitus (DM) adversely affects the skeletal system and is associated with an increased risk of osteoporosis and fragility fractures. This study aimed to assess the diagnostic accuracy of quantitative computed tomography (QCT) in osteoporosis detection in patients with DM. Methods A cross-sectional diagnostic accuracy study was conducted at the diabetic clinic of a tertiary care teaching hospital in North India.

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Objective In this study, we aimed to determine the association between anti-thyroid peroxidase (anti-TPO) antibody and dyslipidemia in subclinical hypothyroidism (SCH). Materials and methods We conducted a cross-sectional case-control study in the department of medicine at a tertiary care teaching hospital in central India. The study consisted of 150 patients (75 cases and 75 controls) who fulfilled the inclusion and exclusion criteria.

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Article Synopsis
  • A new technique was developed for creating single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure.
  • The study examined two device configurations: graphene bottom-contact (nanowire transferred on graphene) and graphene top-contact (graphene transferred on embedded nanowire), comparing their electrical properties with conventional metal/p-GaAs devices.
  • Findings indicate that embedded devices show significantly improved current performance due to a "parallel resistors model," explaining differences in how easily the structures become depleted.
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The performance of GaAs nanowire (NW) devices depends critically on the presence of crystallographic defects in the NWs such as twinning planes and stacking faults, and considerable effort has been devoted to understanding and preventing the occurrence of these. For self-catalysed GaAs NWs grown by molecular beam epitaxy (MBE) in particular, there are in addition other types of defects that may be just as important for NW-based optoelectronic devices. These are the point defects such as the As vacancy and the Ga antisite occurring due to the inherently Ga-rich conditions of the self-catalysed growth.

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