Electrically tunable plasmonic metasurface as a matrix of nanoantennas.

We report the fabrication and characterization of a plasmonic metasurface comprising electrically-contacted sub-wavelength gold dipole nanoantennas, conformally coated by a thin hafnia film, an indium tin oxide layer and a backside mirror, forming metal-oxide-semiconductor (MOS) capacitors, for use as an electrically-tunable reflectarray or metasurface. By voltage biasing the nanoantennas through metallic connectors and leveraging the carrier refraction effect in the MOS capacitors, our measurements demonstrate phase control in reflection over a range of about 30°, with a constant magnitude of reflection coefficient of 0.5, and the absence of secondary lobes.

On the performance of optical phased array technology for beam steering: effect of pixel limitations.

Optical phased arrays are of strong interest for beam steering in telecom and LIDAR applications. A phased array ideally requires that the field produced by each element in the array (a pixel) is fully controllable in phase and amplitude (ideally constant). This is needed to realize a phase gradient along a direction in the array, and thus beam steering in that direction.

Monitoring and automatic tuning and stabilization of a 2×2 MZI optical switch for large-scale WDM switch networks.

Large-scale optical switch networks employ wavelength division multiplexing to expand and facilitate multiple input and outputs. Such networks can be implemented with the Mach-Zehnder interferometer (MZI) as the building block. A fully-loaded MZI switch, meaning one with two optical signals at its two inputs and one that is capable of simultaneously switching those inputs to its two outputs, reduces the number building blocks within the network, and as a result makes them more power and area efficient.

U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band: erratum.

We correct two minor errors in the manuscript. The effective diameter of the ring modulator should be 62.5 μm rather than 65 μm.

Tri-layer silicon nitride-on-silicon photonic platform for ultra-low-loss crossings and interlayer transitions.

We present a three-layer silicon nitride on silicon platform for constructing very large photonic integrated circuits. Efficient interlayer transitions are enabled by the close spacing between adjacent layers, while ultra-low-loss crossings are enabled by the large spacing between the topmost and bottommost layers. We demonstrate interlayer taper transitions with losses < 0.