Acceleration of ferromagnetic resonance measurements by Bayesian experimental design.

Ferromagnetic resonance (FMR) is a broadly used dynamical measurement used to characterize a wide range of magnetic materials. Applied research and development on magnetic thin film materials is growing rapidly alongside a growing commercial appetite for magnetic memory and computing technologies. The ability to execute high-quality, fast FMR surveys of magnetic thin films is needed to meet the demanding throughput associated with rapid materials exploration and quality control.

Low Gilbert damping and high perpendicular magnetic anisotropy in an Ir-coupled L1-FePd-based synthetic antiferromagnet.

Thin ferromagnetic films possessing perpendicular magnetic anisotropy derived from the crystal lattice can deliver the requisite magnetocrystalline anisotropy density for thermally stable magnetic memory and logic devices at the single-digit-nm lateral size. Here, we demonstrate that an epitaxial synthetic antiferromagnet can be formed from L1 FePd, a candidate material with large magnetocrystalline anisotropy energy, through insertion of an ultrathin Ir spacer. Tuning of the Ir spacer thickness leads to synthetic antiferromagnetically coupled FePd layers, with an interlayer exchange field upwards of 0.

Reduction-Induced Magnetic Behavior in LaFeO Thin Films.

The effect of oxygen reduction on the magnetic properties of LaFeO (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior were observed in nominally identical LFO films grown on substrates prepared using different common methods. In an LFO film grown on SrTiO (STO) substrate, the original perovskite film structure was preserved following reduction, and remnant magnetization was only seen at low temperatures.

Sputtered 1-FePd and its Synthetic Antiferromagnet on Si/SiO Wafers for Scalable Spintronics.

As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), 1-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing 1-FePd thin films on Si/SiO wafers is still unmet. In this paper, we prepare high-quality 1-FePd and its SAF on Si/SiO wafers by coating the amorphous SiO surface with an MgO(001) seed layer.

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers.

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers.