Understanding prenatal household exposures to per- and polyfluorylalkyl substances using paired Biological and dust measurements with sociodemographic and housing variables.

Per- and poly-fluoroalkyl substances (PFAS) are chemicals of concern-they are ubiquitous, persistent, with known and suspected health impacts. Well studied, primary sources of exposure to PFAS are drinking water and food. The presence of PFAS in human tissue of general populations suggests other important exposure sources/pathways.

Genotype-Phenotype Correlation in Neurofibromatosis Type 1: Evidence for a Mild Phenotype Associated with Splicing Variants Leading to In-Frame Skipping of Exon 24 [19a].

Neurofibromatosis type 1 (NF1) is an autosomal dominant neurocutaneous disorder caused by loss-of-function variants in the gene. As of 20 November 2023, over 5000 distinct pathogenic or likely pathogenic variants have been reported in public databases. However, only a few genotype-phenotype correlations have been established so far.

Efficiency droop in zincblende InGaN/GaN quantum wells.

The decrease in emission efficiency with increasing drive current density, known as 'droop', of -plane wurtzite InGaN/GaN quantum wells presently limits the use of light-emitting diodes based on them for high brightness lighting applications. InGaN/GaN quantum wells grown in the alternative zincblende phase are free of the strong polarisation fields that exacerbate droop and so were investigated by excitation-dependent photoluminescence and photoreflectance studies. Polarisation-resolved measurements revealed that for all excitation densities studied the emission from such samples largely originates from similar microstructures or combinations of microstructures that form within the quantum well layers.

Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.

Zincblende GaN has the potential to improve the efficiency of green- and amber-emitting nitride light emitting diodes due to the absence of internal polarisation fields. However, high densities of stacking faults are found in current zincblende GaN structures. This study presents a cathodoluminescence spectroscopy investigation into the low-temperature optical behaviour of a zincblende GaN/InGaN single quantum well structure.