The possibility to engineer (GeTe) (Sb Te ) phase-change materials to co-host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe) (Sb Te ) with GeTe-rich composition is presented.
View Article and Find Full Text PDFThe 2D form of tellurium, named tellurene, is one of the latest discoveries in the family of 2D mono-elemental materials. In a trilayer configuration, free-standing tellurene was predicted theoretically to acquire two crystallographic forms, the and phases, corresponding to either a 1T-MoS-like geometry or a trilayer slab exposing the Te(101̄0) surface of bulk Te with helical chains lying in-plane and further reconstructed due to the formation of interchain bonds. Either one or the other of the two phases was observed experimentally to prevail depending on the substrate they were grown onto.
View Article and Find Full Text PDFElemental antimony has been recently proposed as a promising material for phase change memories with improved performances with respect to the most used ternary chalcogenide alloys. The compositional simplification prevents reliability problems due to demixing of the alloy during memory operation. This is made possible by the dramatic stabilization of the amorphous phase once Sb is confined in an ultrathin film 3-5 nm thick.
View Article and Find Full Text PDFAn online survey (N = 210) is presented on how the perceived utility of correct and exaggerated countermeasures against Covid-19 is affected by different pronominalization strategies (impersonal form, you, we). In evaluating the pronominalization effect, we have statistically controlled for the roles of several personal characteristics: Moral Disengagement, Moral Foundations, Health Anxiety, and Embracing of Fake News. Results indicate that, net of personal proclivities, the form decreases the perceived utility of exaggerated countermeasures, possibly due to simulation processes.
View Article and Find Full Text PDFInterfacial Phase Change Memories (iPCMs) based on (GeTe)/SbTe superlattices have been proposed as an alternative candidate to conventional PCMs for the realization of memory devices with superior switching properties. The switching mechanism was proposed to involve a crystalline-to-crystalline structural transition associated with a rearrangement of the stacking sequence of the GeTe bilayers. Density functional theory (DFT) calculations showed that such rearrangement could be achieved by means of a two-step process with an activation barrier for the flipping of Ge and Te atoms which is sensitive to the biaxial strain acting on GeTe bilayers.
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