Ultra-fast switching memristors based on two-dimensional materials.

The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits.

Local field effect on charge-capture/emission dynamics.

Charge-capture/emission is ubiquitous in electron devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood.

Microwave evaluation of electromigration susceptibility in advanced interconnects.

Traditional metrology has been unable to adequately address the needs of the emerging integrated circuits (ICs) at the nano scale; thus, new metrology and techniques are needed. For example, the reliability challenges in fabrication need to be well understood and controlled to facilitate mass production of through-substrate-via (TSV) enabled three-dimensional integrated circuits (3D-ICs). This requires new approaches to the metrology.

Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature.

An unexpected rapid anneal of electrically active defects in an ultrathin (15.5 nm) polar polyimide film at and below glass transition temperature ( ) is reported. The polar polymer is the gate dielectric of a thin-film-transistor.

Analysis and Control of RRAM Overshoot Current.

To combat the large variability problem in RRAM, current compliance elements are commonly used to limit the in-rush current during the forming operation. Regardless of the compliance element (1R-1R or 1T-1R), some degree of current overshoot is unavoidable. The peak value of the overshoot current is often used as a predictive metric of the filament characteristics and is linked to the parasitic capacitance of the test structure.