Publications by authors named "D A Broadway"
Engineering Boron Vacancy Defects in Boron Nitride Nanotubes.
ACS Appl Mater Interfaces
October 2024
Article Synopsis
- Spin defects in hexagonal boron nitride (hBN), particularly negatively charged boron vacancy centers, are gaining attention for their potential in quantum sensing applications.
- This study focuses on engineering spin defects in boron nitride nanotubes (BNNTs), showing that these defects can be distributed along and around the nanotubes.
- The unique tubular structure of BNNTs allows for better control and placement of these spin defects, promising advancements in high-resolution sensing technologies and further understanding of spin defect behavior in hBN.
Two-dimensional materials are extraordinarily sensitive to external stimuli, making them ideal for studying fundamental properties and for engineering devices with new functionalities. One such stimulus, strain, affects the magnetic properties of the layered magnetic semiconductor CrSBr to such a degree that it can induce a reversible antiferromagnetic-to-ferromagnetic phase transition. Using scanning SQUID-on-lever microscopy, we directly image the effects of spatially inhomogeneous strain on the magnetization of layered CrSBr, as it is polarized by a field applied along its easy axis.
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- Josephson junctions allow for lossless electrical current flow in superconductors and are important for technologies like quantum bits, but understanding their supercurrent distribution has been challenging.
- A new platform using a scanning magnetometer with nitrogen vacancy centers in diamond allows researchers to visualize supercurrent flow at the nanoscale, revealing competing ground states in zero-resistance conditions.
- This research uncovers a new mechanism behind the Josephson diode effect and offers insights into unconventional superconductivity, which could improve quantum computing and energy-efficient technology.
Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution.
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- Optically addressable spin defects in two-dimensional materials like hexagonal boron nitride (hBN) are advancing quantum technology, offering potential for new ultra-thin sensors and simulators.
- This study reveals an interaction between two types of spin defects in hBN: S = 1 boron vacancy defects and S = 1/2 carbon-related electron spins, both of which can be controlled and measured at room temperature.
- By tuning these spins to resonate, researchers observed strong dipolar coupling and used S = 1/2 defects for magnetic imaging, showcasing hBN's potential for versatile quantum applications.