Publications by authors named "Cun-Zhu Tong"

For long distance optical interconnects, 1.3-μm surface-emitting lasers are key devices. However, the low output power of several milliwatts limits their application.

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The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum dots, which are coupled by multiple tunneling, are investigated by using the probability amplitude method. It is found that the linear and nonlinear properties of multiple quantum dots can be modified by the tunneling intensity and energy splitting of the system.

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A coherently prepared asymmetric double semiconductor quantum well (QW) is proposed to realize parity-time (PT) symmetry. By appropriately tuning the laser fields and the pertinent QW parameters, PT-symmetric optical potentials are obtained by three different methods. Such a coherent QW system is reconfigurable and controllable, and it can generate new approaches of theoretically and experimentally studying PT-symmetric phenomena.

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An asymmetric double semiconductor quantum well is proposed to realize two-dimensional parity-time (PT) symmetry and an electromagnetically induced grating. In such a nontrivial grating with PT symmetry, the incident probe photons can be diffracted to selected angles depending on the spatial relationship of the real and imaginary parts of the refractive index. Such results are due to the interference mechanism between the amplitude and phase of the grating and can be manipulated by the probe detuning, modulation amplitudes of the standing wave fields, and interaction length of the medium.

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InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization.

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We experimentally study the resonance fluorescence from an excited two-level atom when the atomic upper level is coupled by a nonresonant field to a higher-lying state in a rubidium atomic beam. The heights, widths and positions of the fluorescence peaks can be controlled by modifying the detuning of the auxiliary field. We explain the observed spectrum with the transition properties of the dressed states generated by the coupling of the two laser fields.

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