Ultralow-loss polarization-insensitive silicon nitride-assisted double-etched silicon edge coupler with polarization splitting.

High-performance silicon-based edge couplers for interfacing with standard single-mode fibers encounter significant challenges due to limitations imposed by the minimum fabrication width. Here, we propose a silicon nitride-assisted double-etched O-band silicon edge coupler with a minimum width of 180 nm. Notably, the polarization splitting function naturally integrates into this edge coupler.

Extreme Thermal Insulation and Tradeoff of Thermal Transport Mechanisms between Graphene and WS Monolayers.

Controlling and understanding the heat flow at a nanometer scale are challenging, but important for fundamental science and applications. Two-dimensional (2D) layered materials provide perhaps the ultimate solution for meeting these challenges. While there have been reports of low thermal conductivities (several mW m K) across the 2D heterostructures, phonon-dominant thermal transport remains strong due to the nearly-ideal contact between the layers.

Strain-Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe.

Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties on mechanical strain. In this paper, a combined experimental and theoretical effort is made to investigate the effects of mechanical strain on various spectral features of bilayer MoTe photoluminescence (PL). We found that bilayer MoTe can be converted from an indirect to a direct bandgap material through strain engineering, resulting in a photoluminescence enhancement by a factor of 2.

Self-optimized single-nanowire photoluminescence thermometry.

Nanomaterials-based photoluminescence thermometry (PLT) is a new contact-free photonic approach for temperature sensing, important for applications ranging from quantum technology to biomedical imaging and diagnostics. Even though numerous new materials have been explored, great challenges and deficiencies remain that hamper many applications. In contrast to most of the existing approaches that use large ensembles of rare-earth-doped nanomaterials with large volumes and unavoidable inhomogeneity, we demonstrate the ultimate size reduction and simplicity of PLT by using only a single erbium-chloride-silicate (ECS) nanowire.

Extraction of silver losses at cryogenic temperatures through the optical characterization of silver-coated plasmonic nanolasers.

We report on the extraction of silver losses in the range 10 K-180 K by performing temperature-dependent micro-photoluminescence measurements in conjunction with numerical simulations on silver-coated nanolasers around near-infrared telecommunication wavelengths. By mapping changes in the quality factor of nanolasers into silver-loss variations, the imaginary part of silver permittivity is extracted at cryogenic temperatures. The latter is estimated to reach values an order of magnitude lower than room-temperature values.

Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride.

Single-photon emitters (SPEs) play an important role in many optical quantum technologies. However, an efficient large-scale approach to the generation of high-quality SPE arrays remains an elusive goal at room temperature. Here, we demonstrate a scalable method of generating SPE arrays in hexagonal boron nitride (hBN) with high yield, brightness, and purity using single-pulse irradiation by a femtosecond laser.

Prolonging valley polarization lifetime through gate-controlled exciton-to-trion conversion in monolayer molybdenum ditelluride.

Monolayer 2D semiconductors provide an attractive option for valleytronics due to valley-addressability. But the short valley-polarization lifetimes for excitons have hindered potential valleytronic applications. In this paper, we demonstrate a strategy for prolonging the valley-polarization lifetime by converting excitons to trions through efficient gate control and exploiting the much longer valley-polarization lifetimes for trions than for excitons.

Ultrasensitive Detection of Biomarkers in a Color-Switchable Microcavity-Reactor Laser.

Early detection and diagnosis are vitally important in reducing the mortality rate of fatal diseases but require highly sensitive detection of biomarkers. Presently, detection methods with the highest sensitivity require in vitro processing, while in vivo compatible fluorescence detections require a much higher concentration of biomarkers or limit of detection (LOD). In this paper, a fundamentally new strategy for ultrasensitive detection based on color-switchable lasing with a cavity-enhanced reduction of LOD is demonstrated, down to 1.

Injection-free multiwavelength electroluminescence devices based on monolayer semiconductors driven by an alternating field.

Two-dimensional (2D) semiconductors have emerged as promising candidates for various optoelectronic devices especially electroluminescent (EL) devices. However, progress has been hampered by many challenges including metal contacts and injection, transport, and confinement of carriers due to small sizes of materials and the lack of proper double heterostructures. Here, we propose and demonstrate an alternative approach to conventional current injection devices.

Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons.

Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices. Current manipulation approaches for valley polarization of IXs are mainly limited in electrical field/doping, magnetic field or twist-angle engineering. Here, we demonstrate an electrochemical-doping method, which is efficient, in-situ and nonvolatile.

Room-Temperature Exciton-Based Optoelectronic Switch.

Excitons, bound pairs of electrons and holes, could act as an intermediary between electronic signal processing and optical transmission, thus speeding up the interconnection of photoelectric communication. However, up to date, exciton-based logic devices such as switches that work at room temperature are still lacking. This work presents a prototype of a room-temperature optoelectronic switch based on excitons in WSe monolayer.

Reconstructing Local Profile of Exciton-Emission Wavelengths across a WS Bubble beyond the Diffraction Limit.

Air bubbles formed between layers of two-dimensional (2D) materials not only are unavoidable but also emerge as an important means of engineering their excitonic emission properties, especially as controllable quantum light sources. Measuring the actual spatially resolved optical properties across such bubbles is important for understanding excitonic physics and for device applications; however, such a measurement is challenging due to nanoscale features involved which require spatial resolution beyond the diffraction limit. Additional complexity is the involvement of multiple physical effects such as mechanical strain and dielectric environment that are difficult to disentangle.

Excitonic complexes and optical gain in two-dimensional molybdenum ditelluride well below the Mott transition.

Semiconductors that can provide optical gain at extremely low carrier density levels are critically important for applications such as energy efficient nanolasers. However, all current semiconductor lasers are based on traditional semiconductor materials that require extremely high density levels above the so-called Mott transition to realize optical gain. The new emerging 2D materials provide unprecedented opportunities for studying new excitonic physics and exploring new optical gain mechanisms at much lower density levels due to the strong Coulomb interaction and co-existence and mutual conversion of excitonic complexes.

Nanowires for Photonics.

All-photonic integrated circuits are promising platforms for future systems beyond the limitation of Moore's law. Over the last several decades, one-dimensional (1D) nanowires have demonstrated great potential in photonic circuitry because of their unique 1D structure to effectively generate and tightly confine optical signals as well as easily tunable optical properties. In this Review, we categorize nanowires based on the optical properties (i.

A measurement method of the intrinsic optical absorption spectrum of 1D nanomaterials and its application to erbium chloride silicate nanowires.

Measurement of the absolute absorption coefficient of various nanomaterials over a wide spectral range is important for a variety of photonic applications but is very challenging due to strong scatterings from the intrinsically granular features of nanomaterials. We report in this paper a two-step method to determine the absorption spectrum on the absolute scale for an ensemble of nanowires: first, the relative absorption spectrum over a wide spectral range is measured from the nanowire ensemble in a carefully designed experiment using integrating sphere. Second, the absorption coefficient at a single wavelength is measured on a single nanowire to serve as the calibration of the relative spectrum.

Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system.

Dynamical color-controllable lasing with extremely wide tuning range from red to green in a single alloy nanowire using nanoscale manipulation.

Multicolor lasing and dynamic color-tuning in a wide spectrum range are challenging to realize but critically important in many areas of technology and daily life, such as general lighting, display, multicolor detection, and multiband communication. By exploring nanoscale growth and manipulation, we have demonstrated the first active dynamical color control of multicolor lasing, continuously tunable between red and green colors separated by 107 nm in wavelength. This is achieved in a purposely engineered single CdSSe alloy nanowire with composition varied along the wire axis.

Influence of supersaturation and spontaneous catalyst formation on the growth of PbS wires: toward a unified understanding of growth modes.

High quality stoichiometric lead sulfide (PbS) wires were synthesized by a simple chemical vapor deposition (CVD) process using pure PbS powder as the material source. Growth mechanisms were systematically investigated under various growth conditions, with three modes of growth identified: direct vapor-liquid-solid (VLS) wire growth nucleating from the substrate surface, bulk PbS crystallites by vapor-solid (VS) deposition, and subsequent VLS growth nucleating on top of the bulk deposition through spontaneously formed catalyst particles. Furthermore, we found that these growth modes can be organized in terms of different levels of supersaturation, with VS bulk deposition dominating at high supersaturation and VLS wire growth on the substrate dominating at low supersaturation.

In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics.

We report on the one-dimensional (1D) heteroepitaxial growth of In(x)Ga(1-x)As (x = 0.2-1) nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using metalorganic chemical vapor deposition (MOCVD) without catalysts or masks. The epitaxial growth takes place spontaneously producing uniform, nontapered, high aspect ratio NW arrays with a density exceeding 1 × 10(8)/cm(2).

A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays.

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer.

Spatial composition grading of quaternary ZnCdSSe alloy nanowires with tunable light emission between 350 and 710 nm on a single substrate.

We demonstrated a general methodology of growing spatially composition-controlled alloys by combining spatial source reagent gradient with a temperature gradient. Using this dual gradient method, we achieved for the first time a continuous spatial composition grading of single-crystal quaternary Zn(x)Cd(1-x)S(y)Se(1-y) alloy nanowires over the complete band gap range along the length of a substrate. The band gap grading spans between 3.

Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides.

We demonstrate lasing in Metal-Insulator-Metal (MIM) waveguides filled with electrically pumped semiconductor cores, with core width dimensions below the diffraction limit. Furthermore these waveguides propagate a transverse magnetic (TM0) or so called gap plasmon mode [1-4]. Hence we show that losses in sub-wavelength MIM waveguides can be overcome to create small plasmon mode lasers at wavelengths near 1500 nm.

Quaternary alloy semiconductor nanobelts with bandgap spanning the entire visible spectrum.

We used an improved cothermal evaporation route for the first time to achieve quaternary semiconductor nanostructured alloys, using an example of Zn(x)Cd(1-x)S(y)Se(1-y) nanobelts. The PL (bandgap) of these as-grown nanostructured alloys can be continuously tunable across the entire visible spectrum through experimentally controlling their compositions. Such widely controlled alloy nanostructures via composition/light emission provide a new material platform for applications in wavelength-tunable lasers, multicolor detectors, full-spectrum solar cells, LEDs, and color displays.