Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors.

Resistive switching devices based on the Au/Ti/TiO/Au stack were developed. In addition to standard electrical characterization by means of - curves, scanning thermal microscopy was employed to localize the hot spots on the top device surface (linked to conductive nanofilaments, CNFs) and perform in-operando tracking of temperature in such spots. In this way, electrical and thermal responses can be simultaneously recorded and related to each other.

Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories.

A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior.