Deep-learning survival analysis for patients with calcific aortic valve disease undergoing valve replacement.

Calcification of the aortic valve (CAVDS) is a major cause of aortic stenosis (AS) leading to loss of valve function which requires the substitution by surgical aortic valve replacement (SAVR) or transcatheter aortic valve intervention (TAVI). These procedures are associated with high post-intervention mortality, then the corresponding risk assessment is relevant from a clinical standpoint. This study compares the traditional Cox Proportional Hazard (CPH) against Machine Learning (ML) based methods, such as Deep Learning Survival (DeepSurv) and Random Survival Forest (RSF), to identify variables able to estimate the risk of death one year after the intervention, in patients undergoing either to SAVR or TAVI.

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories.

One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options. Tools like machine learning (ML) and deep neural networks are becoming a de-facto standard. Nowadays, computing facilities based on the Von Neumann architecture are devoted to these tasks, yet rapidly hitting a bottleneck in performance and energy efficiency.

Editorial for the Special Issue on Flash Memory Devices.

Flash memory devices represented a breakthrough in the storage industry since their inception in the mid-1980s, and innovation is still ongoing after more than 35 years [...

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories.

Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology. However, the paradigm change represented by the 3D memory integration concept has complicated the randomization task due to the increased dimensions of the memory array, especially along the bitlines. In this work, we propose an easy to implement, cost effective, and fully scalable with memory dimensions, randomization scheme that guarantees optimal randomization along the wordline and the bitline dimensions.

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO RRAM devices.

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO based memristive cells is studied.