Tuning electronic states of a CdSe/ZnS quantum dot by only one functional dye molecule.

Self-assembly of only one functionalized porphyrin dye molecule with one CdSe/ZnS quantum dot (QD) not only modifies the photoluminescence (PL) intensity but also creates a few energetically clearly distinguishable electronic states, opening additional effective relaxation pathways. The related energy modifications are in the range of 10-30 meV and show a pronounced sensitivity to the specific nature of the respective dye. We assign the emerging energies to surface states.

The fluorescence intermittency for quantum dots is not power-law distributed: a luminescence intensity resolved approach.

The photoluminescence (PL) of single emitters like semiconductor quantum dots (QDs) shows PL intermittency, often called blinking. We explore the PL intensities of single CdSe/ZnS QDs in polystyrene (PS), on polyvenylalcohol (PVA), and on silicon oxide (SiOx) by the change-point analysis (CPA). By this, we relate results from the macrotime (sub-ms to 1000 s) and the microtime (0.

Influence of the dielectric environment on the photoluminescence intermittency of CdSe quantum dots.

We show experimentally that the photoluminescence intermittency (blinking) of single CdSe quantum dots (QDs) is influenced by the dielectric properties of the embedding environment (matrix), the type of ligands and the capping shell. For the on-times, we observe (and tentatively explain) a strong deviation from the commonly reported inverse power law behaviour, which can be taken into account by an exponential cut-off at long times. We assign this component to the photoejection of the electron, while the power law behaviour is a combination of hole- and electron-trapping processes.

Photoinduced hole trapping in single semiconductor quantum dots at specific sites at silicon oxide interfaces.

Blinking dynamics of CdSe/ZnS semiconductor quantum dots (QD) are characterized by (truncated) power law distributions exhibiting a wide dynamic range in probability densities and time scales both for off- and on-times. QDs were immobilized on silicon oxide surfaces with varying grades of hydroxylation and silanol group densities, respectively. While the off-time distributions remain unaffected by changing the surface properties of the silicon oxide, a deviation from the power law dependence is observed in the case of on-times.