Ultra-shallow p-type doping of silicon by performing atomic layer deposition of AlO thin films onto SiO/Si.

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin AlO films deposited on intrinsic silicon with a native SiO layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.