Impact of Cationic Stoichiometry on Physical, Optical and Electrical Properties of SrTiO Thin Films Grown on (001)-Oriented Si Substrates.

In this study, we investigate the changes in the crystalline structure of MBE-deposited SrTiO layers on Si with different deviations from Sr/Ti stoichiometry as deposited but also after annealing at high temperatures (>600 °C). We show that as-grown 15 nm thick non-stochiometric SrTiO layers present surprisingly lower FWHM values of the (002) omega diffraction peak compared to fully stoichiometric layers of similar thickness. This can misleadingly point to superior crystalline quality of such non-stochiometric layers.

Observation of the radiative decay of the Th nuclear clock isomer.

The radionuclide thorium-229 features an isomer with an exceptionally low excitation energy that enables direct laser manipulation of nuclear states. It constitutes one of the leading candidates for use in next-generation optical clocks. This nuclear clock will be a unique tool for precise tests of fundamental physics.

Integration of LiTiO Crystalline Films on Silicon Toward High-Rate Performance Lithionic Devices.

The growth of crystalline Li-based oxide thin films on silicon substrates is essential for the integration of next-generation solid-state lithionic and electronic devices including on-chip microbatteries, memristors, and sensors. However, growing crystalline oxides directly on silicon typically requires high temperatures and oxygen partial pressures, which leads to the formation of undesired chemical species at the interface compromising the crystal quality of the films. In this work, we employ a 2 nm gamma-alumina (γ-AlO) buffer layer on Si substrates in order to grow crystalline thin films of LiTiO (LTO), a well-known active material for lithium-ion batteries.

On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides.

Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since unique properties can hence be precisely engineered. The synthesis of stacked vdW layers, however, remains to date, hardly understood.

Peculiar alignment and strain of 2D WSe grown by van der Waals epitaxy on reconstructed sapphire surfaces.

The increasing scientific and industry interest in 2D MX materials within the field of nanotechnology has made the single crystalline integration of large area van der Waals (vdW) layers on commercial substrates an important topic. The c-plane oriented (3D crystal) sapphire surface is believed to be an interesting substrate candidate for this challenging 2D/3D integration. Despite the many attempts that have been made, the yet incomplete understanding of vdW epitaxy still results in synthetic material that shows a crystallinity far too low compared to natural crystals that can be exfoliated onto commercial substrates.

Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon.

Several approaches for growing III-V lasers on silicon were recently demonstrated. Most are not compatible with further integration, however, and rely on thick buffer layers and require special substrates. Recently, we demonstrated a novel approach for growing high quality InP without buffer on standard 001-silicon substrates using a selective growth process compatible with integration.

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn.

An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide stack. The performance of GeSn transistors is degraded due to the high density of traps at the oxide-semiconductor interface. Several oxide-gate stacks have been pursued, and a midgap Dit obtained using the ac conductance method, is found in literature.

Polytypic InP nanolaser monolithically integrated on (001) silicon.

On-chip optical interconnects still miss a high-performance laser monolithically integrated on silicon. Here, we demonstrate a silicon-integrated InP nanolaser that operates at room temperature with a low threshold of 1.69 pJ and a large spontaneous emission factor of 0.