Local V Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires.

This work focuses on the extraction of the open circuit voltage (V) on photovoltaic nanowires by surface photovoltage (SPV) based on Kelvin probe force microscopy (KPFM) measurements. In a first approach, P-I-N radial junction (RJ) silicon nanowire (SiNW) devices were investigated under illumination by KPFM and current-voltage (I-V) analysis. Within 5%, the extracted SPV correlates well with the V.