Correction: Integrated silicon photonic MEMS.

[This corrects the article DOI: 10.1038/s41378-023-00498-z.].

100 Gbps PAM4 ultra-thin photodetectors integrated on SOI platform by micro transfer printing.

The integration of compact high-bandwidth III-V active devices in a scalable manner is highly significant for Silicon-on-insulator (SOI) photonic integrated circuits. To address this, we demonstrate the integration of pre-fabricated 21 × 57 µm InGaAs photodetector (PD) coupons with a thickness of 675 nm to a 500 nm SOI platform using a direct bonding micro-transfer printing process. The common devices are coupled to the Si waveguides via butt, grating and evanescent coupling schemes with responsivities of 0.

Integrated silicon photonic MEMS.

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and quantum information processing. The success of silicon photonics has been enabled by the unique combination of performance, high yield, and high-volume capacity that can only be achieved by standardizing manufacturing technology. Today, standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components, including low-loss optical routing, fast modulation, continuous tuning, high-speed germanium photodiodes, and high-efficiency optical and electrical interfaces.

Vacuum-sealed silicon photonic MEMS tunable ring resonator with an independent control over coupling and phase.

Ring resonators are a vital element for filters, optical delay lines, or sensors in silicon photonics. However, reconfigurable ring resonators with low-power consumption are not available in foundries today. We demonstrate an add-drop ring resonator with the independent tuning of round-trip phase and coupling using low-power microelectromechanical (MEMS) actuation.

Point-to-point overlay of a 100Gb/s DP-QPSK channel in LR-PONs for urban and rural areas.

The continuing growth in information demand from fixed and mobile end-users, coupled with the need to deliver this content in an economically viable manner, is driving new innovations in access networks. In particular, it is becoming increasingly important to find new ways to enable the coexistence of heterogeneous services types which may require different signal modulation formats over the same fiber infrastructure. For example, the same physical layer can potentially be used to deliver shared 10Gb/s services to residential customers, dedicated point-to-point (P2P) 100Gb/s services to business customers, and wireless fronthaul, in a highly cost-effective manner.

Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links.

We demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM's V. This is important when driver circuits are realized in deep submicron CMOS process nodes.

Demonstration of error-free 25Gb/s duobinary transmission using a colourless reflective integrated modulator.

To realise novel, low-cost, photonic technologies that can support 100Gb/s Ethernet in next-generation dense wavelength-division-multiplexed metro transport networks, we are developing arrayed photonic integrated circuits that leverage colourless reflective modulators. Here, we demonstrate a single-channel, hybrid reflective electroabsorption modulator-based device, showing error-free 25.3Gb/s duobinary transmission with bit-error rates less than 1 × 10(-12) over 35km of standard single-mode fibre.

An upstream reach-extender for 10Gb/s PON applications based on an optimized semiconductor amplifier cascade.

We present a reach-extender for the upstream transmission path of 10Gb/s passive optical networks based on an optimised cascade of two semiconductor optical amplifiers (SOAs). Through careful optimisation of the bias current of the second stage SOA, over 19dB input dynamic range and up to 12dB compression of the output dynamic range were achieved without any dynamic control. A reach of 70km and split up to 32 were demonstrated experimentally using an ac-coupled, continuous-mode receiver with a reduced 56ns ac-coupling constant.

Optimisation of SOA-REAMs for hybrid DWDM-TDMA PON applications.

We demonstrate how loss-optimised, gain-saturated SOA-REAM based reflective modulators can reduce the burst to burst power variations due to differential access loss in the upstream path in carrier distributed passive optical networks by 18 dB compared to fixed linear gain modulators. We also show that the loss optimised device has a high tolerance to input power variations and can operate in deep saturation with minimal patterning penalties. Finally, we demonstrate that an optimised device can operate across the C-Band and also over a transmission distance of 80 km.

A 10G linear burst-mode receiver supporting electronic dispersion compensation for extended-reach optical links.

We present a novel 10G linear burst-mode receiver (LBMRx). Equipped with a PIN photodiode, a high sensitivity of -22.7 dBm (bit-error rate: 1.