Raman Investigation on Silicon Nitride Chips after Soldering onto Copper Substrates.

The unique electrical properties of silicon nitride have increased the applications in microelectronics, especially in the manufacture of integrated circuits. Silicon nitride is mainly used as a passivation barrier against water and sodium ion diffusion and as an electrical insulator between polysilicon layers in capacitors. The interface with different materials, like semiconductors and metals, through soldering may induce residual strains in the final assembly.

Micro-Raman for Local Strain Evaluation of GaN LEDs and Si Chips Assembled on Cu Substrates.

Integrated circuits are created by interfacing different materials, semiconductors, and metals, which are appropriately deposited or grown on substrates and layers soldered together. Therefore, the characteristics of starting materials and process temperatures are of great importance, as they can induce residual strains in the final assembly. Identifying and quantifying strain becomes strategically important in optimizing processes to enhance the performance, duration, and reliability of final devices.

Synthesis, characterization and photocatalytic properties of nanostructured lanthanide doped β-NaYF/TiO composite films.

The photocatalytic approach is known to be one of the most promising advanced oxidation processes for the tertiary treatment of polluted water. In this paper, β-NaYF/TiO composite films have been synthetized through a novel sol-gel/spin-coating approach using a mixture of β-diketonate complexes of Na and Y, and Yb, Tm, Gd, Eu as doping ions, together with the TiO P25 nanoparticles. The herein pioneering approach represents an easy, straightforward and industrially appealing method for the fabrication of doped β-NaYF/TiO composites.