Publications by authors named "Claudia Casu"

The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compressive strain induced by the lattice mismatch between the InGaN and GaN layers, and to the stronger incorporation of defects favored by the presence of indium. Such defects can limit the performance and the reliability of LEDs, since they can act as non-radiative recombination centers, and favor the degradation of neighboring semiconductor layers. To investigate the location of the layers mostly subjected to degradation, we designed a color-coded structure with two quantum wells having different indium contents.

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