Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiN Stress-Engineered Technique.

In this work, we present the novel application of SiN stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress SiN passivation significantly enhances the barrier height at the heterojunction beneath the gate, maintaining it above the quasi-Fermi level even as rises to 20 V. As a result, in GaN devices with a gate length of 160 nm, the devices with compressive stress SiN passivation exhibit significantly lower drain-induced barrier lowering (DIBL) factors of 2.

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN Stress-Engineering Technique.

In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiN passivation contributed to the suppression of Fowler-Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V.

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures.

The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure.

Dual-Mode Hybrid Quasi-SAW/BAW Resonators With High Effective Coupling Coefficient.

This article reports on a design journey for ScAl - N-based dual-mode hybrid quasi-surface and bulk acoustic wave (quasi-SAW/BAW) resonators. Four types of acoustic excitation configurations are proposed in these designs based on Sc AlN/6H-SiC stack architectures. The influence of Sc AlN materials, film thickness, and device configurations on the performance is investigated.

Electroacupuncture exerts an anti-migraine effect via modulation of the 5-HT7 receptor in the conscious rat.

Background: Acupuncture has been recommended as an alternative therapy for migraine. Emerging evidence suggests that the 5-HT receptor (5-HTR) plays a significant facilitatory role in descending modulation in migraine pathophysiology, and that activation of 5-HTR in the descending pathway is involved in migraine central sensitisation.

Objective: To investigate the ability of electroacupuncture (EA) to ameliorate central sensitisation via modulation of 5-HTR in the descending pain pathways using a rat model of migraine induced by repetitive dural electrical stimulation (DES).

Effect of acupuncture on sleep quality and hyperarousal state in patients with primary insomnia: study protocol for a randomised controlled trial.

Introduction: Primary insomnia (PI) is commonly defined as a state of having disturbed daytime activities due to poor night-time sleep quality. Studies have demonstrated that it is a disorder of 24 h hyperarousal, expressed in terms of physiological, cognitive and cortical activation. Acupuncture is considered to be beneficial to restore the normal sleep-wake cycle.