High-Precision Small-Signal Model for Double-Channel-High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect.

This paper presents a new small-signal model for double-channel (DC)-high-electron-mobility transistors, developed through an analysis of the unique coupling effects between channels in devices. Unlike conventional single-channel HEMTs, where electrons only transport laterally in the channel, DC-HEMTs exhibit additional vertical transport between the two channels along the material direction. This double-channel coupling effect significantly limits the applicability of traditional small-signal models to DC-HEMTs.