Publications by authors named "Chunyang Kong"

Alkali metals (Li, Na, and K) are deemed as the ideal anode materials for next-generation high-energy-density batteries because of their high theoretical specific capacity and low redox potentials. However, alkali metal anodes (AMAs) still face some challenges hindering their further applications, including uncontrollable dendrite growth and unstable solid electrolyte interphase during cycling, resulting in low Coulombic efficiency and inferior cycling performance. In this regard, designing 3D current collectors as hosts for AMAs is one of the most effective ways to address the above-mentioned problems, because their sufficient space could accommodate AMAs' volume expansion, and their high specific surface area could lower the local current density, leading to the uniform deposition of alkali metals.

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One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-GaO films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes.

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The construction of heterojunctions has attracted considerable attention among the various strategies of water-splitting for hydrogen evolution due to their band structure advantages. In this research, we combined chemical vapor deposition and pulsed laser deposition to fabricate MoS/g-CN heterojunction films on indium-tin oxide glass substrates, and we studied the photoelectrochemical (PEC) performance. The x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and scanning electron microscope characterizations suggested the successful preparation of MoS/g-CN heterojunction films.

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P-type conductive Mn-N co-doped ZnO films were prepared by annealing N(+)-implanted Zn0.92Mn0.08O films in a N2 ambient.

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