Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer.

The leakage of the electronic current of a laser diode (LD) has some significant influences on the performance of the LD. In this study, commercial simulation software LASTIP is used to numerically evaluate the performances of LDs by using different wavelengths and Al contents of the electron blocking layer (EBL). These LDs a adopt multilayer structure, which contains cladding layers, waveguide layers, multiple quantum well layers, contact layers and an AlGaN EBL.