Displacement Monitoring of a Bridge Based on BDS Measurement by CEEMDAN-Adaptive Threshold Wavelet Method.

From the viewpoint of BDS bridge displacement monitoring, which is easily affected by background noise and the calculation of a fixed threshold value in the wavelet filtering algorithm, which is often related to the data length. In this paper, a data processing method of Complete Ensemble Empirical Mode Decomposition with Adaptive Noise (CEEMDAN), combined with adaptive threshold wavelet de-noising is proposed. The adaptive threshold wavelet filtering method composed of the mean and variance of wavelet coefficients of each layer is used to de-noise the BDS displacement monitoring data.

Bright, stable, and tunable solid-state luminescence of carbon nanodot organogels.

Despite the sustained enthusiastic interest in fluorescent carbon nanodots (FCNDs), it is still challenging to achieve bright and widely tunable solid-state luminescence. Herein, organogels embedded with FCNDs were simply synthesized via a one-pot pyrolysis method. Subsequently, the excitation of a single ultraviolet (UV) excitation line results in tunable solid-state luminescence ranging from blue to red with quantum yields (QYs) >14%.

Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface.