Visualization of Band Shifting and Interlayer Coupling in WMoS Alloys Using Near-Field Broadband Absorption Microscopy.

Beyond-diffraction-limit optical absorption spectroscopy provides in-depth information on the graded band structures of composition-spread and stacked two-dimensional materials, in which direct/indirect bandgap, interlayer coupling, and defects significantly modify their optoelectronic functionalities such as photoluminescence efficiency. We here visualize the spatially varying band structure of monolayer and bilayer transition metal dichalcogenide alloys by using near-field broadband absorption microscopy. The near-field spectral and spatial information manifests the excitonic band shift that results from the interplay of composition spreading and interlayer coupling.

Near-field spectroscopic imaging of exciton quenching at atomically sharp MoS/WS lateral heterojunctions.

Heterojunctions made by laterally stitching two different transition metal dichalcogenide monolayers create a unique one-dimensional boundary with intriguing local optical properties that can only be characterized by nanoscale-spatial-resolution spectral tools. Here, we use near-field photoluminescence (NF-PL) to reveal the narrowest region (105 nm) ever reported of photoluminescence quenching at the junction of a laterally stitched WS/MoS monolayer. We attribute this quenching to the atomically sharp band offset that generates a strong electric force at the junction to easily dissociate excitons.