High spin current density in gate-tunable spin-valves based on graphene nanoribbons.

The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories (MRAMs), characterized by 2D materials are the goal of the effort. A sufficiently large spin current density is indispensable for the writing mode of MRAMs to switch states.