Publications by authors named "Chun-Ming FanChiang"
Ultrathin (BiSb)Se Field Effect Transistor with Large ON/OFF Ratio.
ACS Appl Mater Interfaces
April 2017
Article Synopsis
- Ultrathin three-dimensional topological insulator films, specifically (BiSb)Se, show high potential for field effect devices due to their unique properties.
- These films were fabricated on SrTiO substrates and exhibited a remarkable resistance change of approximately 25,000% when influenced by back gate voltage.
- The significant ON/OFF ratio is attributed to a combination of Sb-doping and reduced film thickness, suggesting possibilities for advanced spin transistors based on topological insulators.