Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO film across the phase transition.

Exploring flexible electronics is on the verge of innovative breakthroughs in terahertz (THz) communication technology. Vanadium dioxide (VO) with insulator-metal transition (IMT) has excellent application potential in various THz smart devices, but the associated THz modulation properties in the flexible state have rarely been reported. Herein, we deposited an epitaxial VO film on a flexible mica substrate via pulsed-laser deposition and investigated its THz modulation properties under different uniaxial strains across the phase transition.

Synthesis of a New Ferroelectric Relaxor Based on a Combination of Antiferroelectric and Paraelectric Systems.

Relaxor ferroelectric-based energy storage systems are promising candidates for advanced applications as a result of their fast speed and high energy storage density. In the research field of ferroelectrics and relaxor ferroelectrics, the concept of solid solution is widely adopted to modify the overall properties and acquire superior performance. However, the combination between antiferroelectric and paraelectric materials was less studied and discussed.

Strain engineering of optical properties in transparent VO/muscovite heterostructures.

Transparent VO/muscovite heterostructures have attracted considerable attention because of their unique chemical and physical properties and potential practical applications. In this paper, we investigated the influence of uniaxial mechanical strain on the optical properties of VO/muscovite heterostructures through Raman scattering and optical transmittance measurements. Under applied strain, linear shifts in peak positions of Raman-active phonon modes at approximately 340, 309, and 391 cm were observed.

Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits.

The most pressing barrier for the development of advanced electronics based on two-dimensional (2D) layered semiconductors stems from the lack of site-selective synthesis of complementary n- and p-channels with low contact resistance. Here, we report an in-plane epitaxial route for the growth of interlaced 2D semiconductor monolayers using chemical vapor deposition with a gas-confined scheme, in which patterned graphene (Gr) serves as a guiding template for site-selective growth of Gr-WS-Gr and Gr-WSe-Gr heterostructures. The Gr/2D semiconductor interface exhibits a transparent contact with a nearly ideal pinning factor of 0.

Transparent Antiradiative Ferroelectric Heterostructure Based on Flexible Oxide Heteroepitaxy.

In the era of Internet of Things, the demand for flexible and transparent electronic devices has shifted to the forefront of materials science research. However, the radiation damage to key performance of transparent devices under radiative environment remains as a critical issue. Here, we present a promising technology for nonvolatile transparent electronic devices based on flexible oxide heteroepitaxy.

Scalable van der Waals Heterojunctions for High-Performance Photodetectors.

Atomically thin two-dimensional (2D) materials have attracted increasing attention for optoelectronic applications in view of their compact, ultrathin, flexible, and superior photosensing characteristics. Yet, scalable growth of 2D heterostructures and the fabrication of integrable optoelectronic devices remain unaddressed. Here, we show a scalable formation of 2D stacks and the fabrication of phototransistor arrays, with each photosensing element made of a graphene-WS vertical heterojunction and individually addressable by a local top gate.

Flexible ferroelectric element based on van der Waals heteroepitaxy.

We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times).

Heteroepitaxy of FeO/Muscovite: A New Perspective for Flexible Spintronics.

Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications.

Oxide Heteroepitaxy for Flexible Optoelectronics.

The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts.