[Raman spectra analysis of GaN : Er films prepared by ion implantation].

U-, n- and p-GaN : Er films were prepared by ion implantation method. Three carrier types of samples were studied by Raman spectra analysis. After Er+ ion implantation into GaN samples, new Raman peaks at wavenumber of 293, 362 (see text) 670 cm-1 appeared, where 293 cm-1 was considered as disordered activation of Raman scattering (DARS), 362 and 670 cm-1 may be associated with GaN lattice defects formed after ion implantation.