Meter-scale van der Waals films manufactured via one-step roll printing.

A weak van der Waals (vdW) force in layered materials enables their isolation into thin flakes through mechanical exfoliation while sustaining their intrinsic electronic and optical properties. Here, we introduce a universal roll-printing method capable of producing vdW multilayer films on wafer-to-meter scale. This process uses sequential exfoliation and transfer of layered materials from the powder sources to target substrates through a repeated rolling of a cylindrical metal drum.

Mid-Infrared, Optically Active Black Phosphorus Thin Films on Centimeter Scale.

Black phosphorus (BP) is a narrow bandgap (∼0.3 eV) semiconductor with a great potential for optoelectronic devices in the mid-infrared wavelength. However, it has been challenging to achieve a high-quality scalable BP thin film.

Doping limitation due to self-compensation by native defects in In-doped rocksalt CdZnO.

Cadmium oxide (CdO)-ZnO alloys (CdZnO) exhibit a transformation from the wurtzite to the rocksalt (RS) phase at a CdO composition of ∼70% with a drastic change in the band gap and electrical properties. RS-CdZnO alloys (> 0.7) are particularly interesting for transparent conductor applications due to their wide band gap and high electron mobility.

Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering.

Al doped ZnO (AZO) is a promising transparent conducting oxide to replace the expensive Sn doped InO(ITO). Understanding the formation and evolution of defects in AZO is essential for its further improvement. Here, we synthesize transparent conducting AZO thin films by reactive DC magnetron sputtering.

Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-GaO Alloys with Widely Tunable Electronic Bands.

In this work, we have synthesized CdGaO alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous.