Enhancing Resonant Second-Harmonic Generation in Bilayer WSe by Layer-Dependent Exciton-Polaron Effect.

Two-dimensional (2D) materials serve as exceptional platforms for controlled second-harmonic generation (SHG). Current approaches to SHG control often depend on nonresonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe to demonstrate an SHG enhancement concept that leverages strong exciton resonance and a layer-dependent exciton-polaron effect.

Reliability and Convergent Validity of Endurance Indices Derived from Near-Infrared Spectroscopy and Electromyography during a Bilateral Hanging Task in Amateur Rock Climbers.

The ability to hang for a long time before forearm muscle fatigue is a crucial element of successful rock climbing. Electromyography (EMG) and near-infrared spectroscopy (NIRS) are also useful for measuring hemoglobin oxygenation for determining muscle endurance. In the present study, we aimed to evaluate the reliability and validity of muscle endurance indices derived using EMG and NIRS during a hanging task.

Electric-field tunable Type-I to Type-II band alignment transition in MoSe/WS heterobilayers.

Semiconductor heterojunctions are ubiquitous components of modern electronics. Their properties depend crucially on the band alignment at the interface, which may exhibit straddling gap (type-I), staggered gap (type-II) or broken gap (type-III). The distinct characteristics and applications associated with each alignment make it highly desirable to switch between them within a single material.

Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures.

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two-dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely, γ-InSe on ε-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct band gaps.

Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures.

Interlayer excitons, electron-hole pairs bound across two monolayer van der Waals semiconductors, offer promising electrical tunability and localizability. Because such excitons display weak electron-hole overlap, most studies have examined only the lowest-energy excitons through photoluminescence. We directly measured the dielectric response of interlayer excitons, which we accessed using their static electric dipole moment.

Electrically Switchable Intervalley Excitons with Strong Two-Phonon Scattering in Bilayer WSe.

We report the observation of QΓ intervalley exciton in bilayer WSe devices encapsulated by boron nitride. The QΓ exciton resides at ∼18 meV below the QK exciton. The QΓ and QK excitons exhibit different Stark shifts under an out-of-plane electric field due to their different interlayer dipole moments.

Exciton-polaron Rydberg states in monolayer MoSe and WSe.

Exciton polaron is a hypothetical many-body quasiparticle that involves an exciton dressed with a polarized electron-hole cloud in the Fermi sea. It has been evoked to explain the excitonic spectra of charged monolayer transition metal dichalcogenides, but the studies were limited to the ground state. Here we measure the reflection and photoluminescence of monolayer MoSe and WSe gating devices encapsulated by boron nitride.

Excitonic and Valley-Polarization Signatures of Fractional Correlated Electronic Phases in a WSe_{2}/WS_{2} Moiré Superlattice.

We have measured the reflectance contrast, photoluminescence, and valley polarization of a WSe_{2}/WS_{2} heterobilayer moiré superlattice at gate-tunable charge density. We observe absorption modulation of three intralayer moiré excitons at filling factors ν=1/3 and 2/3. We also observe luminescence modulation of interlayer trions at around a dozen fractional filling factors, including ν=-3/2, 1/4, 1/3, 2/5, 2/3, 6/7, 5/3.

Signatures of moiré trions in WSe/MoSe heterobilayers.

Moiré superlattices formed by van der Waals materials can support a wide range of electronic phases, including Mott insulators, superconductors and generalized Wigner crystals. When excitons are confined by a moiré superlattice, a new class of exciton emerges, which holds promise for realizing artificial excitonic crystals and quantum optical effects. When such moiré excitons are coupled to charge carriers, correlated states may arise.

Spin-induced linear polarization of photoluminescence in antiferromagnetic van der Waals crystals.

Antiferromagnets are promising components for spintronics due to their terahertz resonance, multilevel states and absence of stray fields. However, the zero net magnetic moment of antiferromagnets makes the detection of the antiferromagnetic order and the investigation of fundamental spin properties notoriously difficult. Here, we report an optical detection of Néel vector orientation through an ultra-sharp photoluminescence in the van der Waals antiferromagnet NiPS from bulk to atomically thin flakes.

Multipath Optical Recombination of Intervalley Dark Excitons and Trions in Monolayer WSe_{2}.

Excitons and trions (or exciton polarons) in transition metal dichalcogenides (TMDs) are known to decay predominantly through intravalley transitions. Electron-hole recombination across different valleys can also play a significant role in the excitonic dynamics, but intervalley transitions are rarely observed in monolayer TMDs, because they violate the conservation of momentum. Here we reveal the intervalley recombination of dark excitons and trions through more than one path in monolayer WSe_{2}.

Landau-Quantized Excitonic Absorption and Luminescence in a Monolayer Valley Semiconductor.

We investigate Landau-quantized excitonic absorption and luminescence of monolayer WSe_{2} under magnetic field. We observe gate-dependent quantum oscillations in the bright exciton and trions (or exciton polarons) as well as the dark trions and their phonon replicas. Our results reveal spin- and valley-polarized Landau levels (LLs) with filling factors n=+0, +1 in the bottom conduction band and n=-0 to -6 in the top valence band, including the Berry-curvature-induced n=±0 LLs of massive Dirac fermions.

Gate Tunable Dark Trions in Monolayer WSe_{2}.

Monolayer WSe_{2} is an intriguing material to explore dark exciton physics. We have measured the photoluminescence from dark excitons and trions in ultraclean monolayer WSe_{2} devices encapsulated by boron nitride. The dark trions can be tuned continuously between negative and positive trions with electrostatic gating.

Giant intrinsic photoresponse in pristine graphene.

When the Fermi level is aligned with the Dirac point of graphene, reduced charge screening greatly enhances electron-electron scattering. In an optically excited system, the kinematics of electron-electron scattering in Dirac fermions is predicted to give rise to novel optoelectronic phenomena. In this paper, we report on the observation of an intrinsic photocurrent in graphene, which occurs in a different parameter regime from all the previously observed photothermoelectric or photovoltaic photocurrents in graphene: the photocurrent emerges exclusively at the charge neutrality point, requiring no finite doping.

Large, valley-exclusive Bloch-Siegert shift in monolayer WS.

Coherent interaction with off-resonance light can be used to shift the energy levels of atoms, molecules, and solids. The dominant effect is the optical Stark shift, but there is an additional contribution from the so-called Bloch-Siegert shift that has eluded direct and exclusive observation in solids. We observed an exceptionally large Bloch-Siegert shift in monolayer tungsten disulfide (WS) under infrared optical driving.

Observation of Intervalley Biexcitonic Optical Stark Effect in Monolayer WS.

Coherent optical driving can effectively modify the properties of electronic valleys in transition metal dichalcogenides. Here, we observe a new type of optical Stark effect in monolayer WS, one that is mediated by intervalley biexcitons under the blue-detuned driving with circularly polarized light. We find that such helical optical driving not only induces an exciton energy downshift at the excitation valley but also causes an anomalous energy upshift at the opposite valley, which is normally forbidden by the exciton selection rules but now made accessible through the intervalley biexcitons.

Temperature-activated layer-breathing vibrations in few-layer graphene.

We investigated the low-frequency Raman spectra of freestanding few-layer graphene (FLG) at varying temperatures (400-900 K) controlled by laser heating. At high temperature, we observed the fundamental Raman mode for the lowest-frequency branch of rigid-plane layer-breathing mode (LBM) vibration. The mode frequency redshifts dramatically from 81 cm(-1) for bilayer to 23 cm(-1) for 8-layer.

Real-time observation of interlayer vibrations in bilayer and few-layer graphene.

We report real-time observation of the interlayer shearing mode, corresponding to the lateral oscillation of graphene planes, for bi- and few-layer graphene. Using a femtosecond pump-probe technique, we have followed coherent oscillations of this vibrational mode directly in the time domain. The shearing-mode frequency, as expected for an interlayer mode, exhibits a strong and systematic dependence on the number of layers, varying from 1.

Tunable infrared phonon anomalies in trilayer graphene.

Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The phonon feature, lying at ~1580 cm(-1), changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fermi level is tuned away from charge neutrality.

Observation of layer-breathing mode vibrations in few-layer graphene through combination Raman scattering.

We report the observation of layer-breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from two to six layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm(-1). From double resonance theory, we assign the feature as the LO+ZO' combination mode of the out-of-plane LBM (ZO') and the in-plane longitudinal optical mode (LO).

Structure-dependent Fano resonances in the infrared spectra of phonons in few-layer graphene.

The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking.

Water-gated charge doping of graphene induced by mica substrates.

We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm thick bilayers were found to be present in regions of the interface of graphene/mica heterostacks prepared by micromechanical exfoliation of kish graphite.

Imaging stacking order in few-layer graphene.

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the material's electronic properties. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetralayer graphene.

Ultrafast photoluminescence from graphene.

Since graphene has no band gap, photoluminescence is not expected from relaxed charge carriers. We have, however, observed significant light emission from graphene under excitation by ultrashort (30-fs) laser pulses. Light emission was found to occur across the visible spectral range (1.