Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma.

The understanding of ion dynamics in plasma applications has received significant attention. In this study, we examined these effects between He and Ar species, focusing on the Ar ion flux on the substrate. To control heterogeneous collisions, we varied the He addition rate at fixed chamber pressure and the chamber pressure at fixed Ar/He ratio in an inductively coupled Ar/He plasma source.

Characterization of SiO Plasma Etching with Perfluorocarbon (CF and CF) and Hydrofluorocarbon (CHF and CHF) Precursors for the Greenhouse Gas Emissions Reduction.

This paper proposes the use of environmentally friendly alternatives, CF and CHF, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO plasma etching, instead of conventional precursors CF and CHF. The study employs scanning electron microscopy for etch profile analysis and quadrupole mass spectrometry for plasma diagnosis. Ion bombardment energy at the etching conditions is determined through self-bias voltage measurements, while densities of radical species are obtained using quadrupole mass spectroscopy.

Contribution of Ion Energy and Flux on High-Aspect Ratio SiO Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/CF Plasma: Individual Ion Energy and Flux Controlled.

As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspect ratio SiO2 etching characteristics for various trench widths in a dual-frequency capacitively coupled plasma system with Ar/C4F8 gases. We established an individual control window of ion flux and energy by adjusting dual-frequency power sources and measuring the electron density and self-bias voltage.

On the Quenching of Electron Temperature in Inductively Coupled Plasma.

Electron temperature has attracted great attention in plasma processing, as it dominates the production of chemical species and energetic ions that impact the processing. Despite having been studied for several decades, the mechanism behind the quenching of electron temperature with increasing discharge power has not been fully understood. In this work, we investigated the quenching of electron temperature in an inductively coupled plasma source using Langmuir probe diagnostics, and suggested a quenching mechanism based on the skin effect of electromagnetic waves within local- and non-local kinetic regimes.

Determination of Plasma Potential Using an Emissive Probe with Floating Potential Method.

Despite over 90 years of study on the emissive probe, a plasma diagnostic tool used to measure plasma potential, its underlying physics has yet to be fully understood. In this study, we investigated the voltages along the hot filament wire and emitting thermal electrons and proved which voltage reflects the plasma potential. Using a circuit model incorporating the floating condition, we found that the lowest potential on the plasma-exposed filament provides a close approximation of the plasma potential.

Development of the Tele-Measurement of Plasma Uniformity via Surface Wave Information (TUSI) Probe for Non-Invasive In-Situ Monitoring of Electron Density Uniformity in Plasma Display Fabrication Process.

The importance of monitoring the electron density uniformity of plasma has attracted significant attention in material processing, with the goal of improving production yield. This paper presents a non-invasive microwave probe for in-situ monitoring electron density uniformity, called the Tele-measurement of plasma Uniformity via Surface wave Information (TUSI) probe. The TUSI probe consists of eight non-invasive antennae and each antenna estimates electron density above the antenna by measuring the surface wave resonance frequency in a reflection microwave frequency spectrum (S11).

Investigation into SiO Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled.

SiO etching characteristics were investigated in detail. Patterned SiO was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bias voltage) were also measured.

Observation of prior light emission before arcing development in a low-temperature plasma with multiple snapshot analysis.

Arcing is a ubiquitous phenomenon and a crucial issue in high-voltage applied systems, especially low-temperature plasma (LTP) engineering. Although arcing in LTPs has attracted interest due to the severe damage it can cause, its underlying mechanism has yet to be fully understood. To elucidate the arcing mechanism, this study investigated various signals conventionally used to analyze arcing such as light emission, arcing current and voltage, and background plasma potential.

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma.

Recently, the uniformity in the wafer edge area that is normally abandoned in the fabrication process has become important for improving the process yield. The wafer edge structure normally has a difference of height between wafer and electrode, which can result in a sheath bend, distorting important parameters of the etch, such as ionic properties, resulting in nonuniform etching. This problem nowadays is resolved by introducing the supplemented structure called a focus ring on the periphery of the wafer.

Influence of Additive N on O Plasma Ashing Process in Inductively Coupled Plasma.

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O plasma ashing process in various N/O mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density.

Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing.

Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct wafer bonding have been reported, there is still a lack of deep investigations focusing on the plasma itself. Other than the plasma surface treatment, the wafer bonding process includes multiple steps such as surface cleaning and annealing that require comprehensive studies to maximize the bonding strengths.

Refined Appearance Potential Mass Spectrometry for High Precision Radical Density Quantification in Plasma.

As the analysis of complicated reaction chemistry in bulk plasma has become more important, especially in plasma processing, quantifying radical density is now in focus. For this work, appearance potential mass spectrometry (APMS) is widely used; however, the original APMS can produce large errors depending on the fitting process, as the fitting range is not exactly defined. In this research, to reduce errors resulting from the fitting process of the original method, a new APMS approach that eliminates the fitting process is suggested.

Development of a Noninvasive Real-Time Ion Energy Distribution Monitoring System Applicable to Collisional Plasma Sheath.

As the importance of ion-assisted surface processing based on low-temperature plasma increases, the monitoring of ion energy impinging into wafer surfaces becomes important. Monitoring methods that are noninvasive, real-time, and comprise ion collision in the sheath have received much research attention. However, in spite of this fact, most research was performed in invasive, not real-time, and collisionless ion sheath conditions.

Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO.

As low-temperature plasma plays an important role in semiconductor manufacturing, plasma diagnostics have been widely employed to understand changes in plasma according to external control parameters, which has led to the achievement of appropriate plasma conditions normally termed the process window. During plasma etching, shifts in the plasma conditions both within and outside the process window can be observed; in this work, we utilized various plasma diagnostic tools to investigate the causes of these shifts. Cutoff and emissive probes were used to measure the electron density and plasma potential as indicators of the ion density and energy, respectively, that represent the ion energy flux.

Development of a High-Linearity Voltage and Current Probe with a Floating Toroidal Coil: Principle, Demonstration, Design Optimization, and Evaluation.

As the conventional voltage and current (VI) probes widely used in plasma diagnostics have separate voltage and current sensors, crosstalk between the sensors leads to degradation of measurement linearity, which is related to practical accuracy. Here, we propose a VI probe with a floating toroidal coil that plays both roles of a voltage and current sensor and is thus free from crosstalk. The operation principle and optimization conditions of the VI probe are demonstrated and established via three-dimensional electromagnetic wave simulation.

Development of the Measurement of Lateral Electron Density (MOLE) Probe Applicable to Low-Pressure Plasma Diagnostics.

As the importance of measuring electron density has become more significant in the material fabrication industry, various related plasma monitoring tools have been introduced. In this paper, the development of a microwave probe, called the measurement of lateral electron density (MOLE) probe, is reported. The basic properties of the MOLE probe are analyzed via three-dimensional electromagnetic wave simulation, with simulation results showing that the probe estimates electron density by measuring the surface wave resonance frequency from the reflection microwave frequency spectrum (S11).

Crossing Frequency Method Applicable to Intermediate Pressure Plasma Diagnostics Using the Cutoff Probe.

Although the recently developed cutoff probe is a promising tool to precisely infer plasma electron density by measuring the cutoff frequency (fcutoff) in the S21 spectrum, it is currently only applicable to low-pressure plasma diagnostics below several torr. To improve the cutoff probe, this paper proposes a novel method to measure the crossing frequency (fcross), which is applicable to high-pressure plasma diagnostics where the conventional fcutoff method does not operate. Here, fcross is the frequency where the S21 spectra in vacuum and plasma conditions cross each other.

Characterization of SiO Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas.

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias.

Performance Analysis of Inter-Domain Handoff Scheme Based on Virtual Layer in PMIPv6 Networks for IP-Based Internet of Things.

Lately, we see that Internet of things (IoT) is introduced in medical services for global connection among patients, sensors, and all nearby things. The principal purpose of this global connection is to provide context awareness for the purpose of bringing convenience to a patient's life and more effectively implementing clinical processes. In health care, monitoring of biosignals of a patient has to be continuously performed while the patient moves inside and outside the hospital.

High-Throughput Screening, Discovery, and Optimization To Develop a Benzofuran Class of Hepatitis C Virus Inhibitors.

Using a high-throughput, cell-based HCV luciferase reporter assay to screen a diverse small-molecule compound collection (∼ 300,000 compounds), we identified a benzofuran compound class of HCV inhibitors. The optimization of the benzofuran scaffold led to the identification of several exemplars with potent inhibition (EC50 < 100 nM) of HCV, low cytotoxicity (CC50 > 25 μM), and excellent selectivity (selective index = CC50/EC50, > 371-fold). The structure-activity studies culminated in the design and synthesis of a 45-compound library to comprehensively explore the anti-HCV activity.

Discovery of desketoraloxifene analogues as inhibitors of mammalian, Pseudomonas aeruginosa, and NAPE phospholipase D enzymes.

Phospholipase D (PLD) hydrolyses cellular lipids to produce the important lipid second messenger phosphatidic acid. A PLD enzyme expressed by Pseudomonas aeruginosa (PldA) has been shown to be important in bacterial infection, and NAPE-PLD has emerged as being key in the synthesis of endocannabinoids. In order to better understand the biology and therapeutic potential of these less explored PLD enzymes, small molecule tools are required.

Precise control of quantum dot location within the P3HT-b-P2VP/QD nanowires formed by crystallization-driven 1D growth of hybrid dimeric seeds.

Herein, we report a simple fabrication of hybrid nanowires (NWs) composed of a p-type conjugated polymer (CP) and n-type inorganic quantum dots (QDs) by exploiting the crystallization-driven solution assembly of poly(3-hexylthiophene)-b-poly(2-vinylpyridine) (P3HT-b-P2VP) rod-coil amphiphiles. The visualization of the crystallization-driven growth evolution of hybrid NWs through systematic transmission electron microscopy experiments showed that discrete dimeric CdSe QDs bridged by P3HT-b-P2VP polymers were generated during the initial state of crystallization. These, in turn, assemble into elongated fibrils, forming the coaxial P3HT-b-P2VP/QDs hybrid NWs.

Carrier lifetime extension via the incorporation of robust hole/electron blocking layers in bulk heterojunction polymer solar cells.

We report the achievement of a power conversion efficiency (PCE) improvement in P3HT:PCBM-based bulk-heterojunction type polymer solar cells using photocrosslinked P3HT (c-P3HT) as the electron blocking/hole extraction layer and titanium oxide nanoparticles (TiO2) as the hole blocking/electron extraction layer. Devices prepared with a 20 nm thick c-P3HT layer showed an improved PCE of 3.4% compared to devices prepared without the c-P3HT layer (PCE = 3.

Polarity and air-stability transitions in field-effect transistors based on fullerenes with different solubilizing groups.

A series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C60 monoadduct (OXCMA) and indene C60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C60 derivatives showed ambipolar charge transport.

Effect of fullerene tris-adducts on the photovoltaic performance of P3HT:fullerene ternary blends.

Fullerene tris-adducts have the potential of achieving high open-circuit voltages (V(OC)) in bulk heterojunction (BHJ) polymer solar cells (PSCs), because their lowest unoccupied molecular orbital (LUMO) level is higher than those of fullerene mono- and bis-adducts. However, no successful examples of the use of fullerene tris-adducts as electron acceptors have been reported. Herein, we developed a ternary-blend approach for the use of fullerene tris-adducts to fully exploit the merit of their high LUMO level.