In oxide-based RRAMs using reactive electrodes such as Al, the properties of spontaneously formed interfacial layers are critical factors in determining the resistive switching (RS) performance and reliability. This interfacial layer can provide the beneficial function of oxygen reservoir and series resistance, but is very labile and prone to deterioration, causing fatal reliability problems. Moreover, there are technical difficulties in manipulating and improving the functional interfacial layer due to the various interaction dynamics near the interface and the unstable thermodynamic properties of Al.
View Article and Find Full Text PDFIn this contribution, sulfonated poly(ether ether ketone) (SPEEK) is inter-connected using a hydrophobic oligomer via poly-condensation reaction to produce SPEEK analogues as PEMs. Prior sulfonation is performed for SPEEK to avoid random sulfonation of multi-block copolymers that may destroy the mechanical toughness of polymer backbone. A greater local density of ionic moieties exist in SPEEK and good thermomechanical properties of hydrophobic unit offer an unique approach to promote the proton conductivity as well as thermomechanical stability of membrane, as verify from AC impedance and TGA.
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