Widely tunable S-band ring-cavity Tm-doped fluorotellurite fiber laser.

Tm-doped fluorotellurite fibers (TDFTFs) are fabricated by using a rod-in-tube method. A 2.1 m long TDFTF is used as the gain medium, in which both ends of the TDFTF are connected to a short piece of a silica fiber by direct fusion splicing.

Intense emission at 605 nm from Pr-doped fluorotellurite glass fibers.

Pr-doped fluorotellurite glass fibers (PDFTFs) were fabricated by using a rod-in-tube method. By using a 976/1400 nm dual-wavelength upconversion pump technique, an intense emission at 605 nm was obtained from a 6 cm long PDFTF, which was attributed to the transition D→ H of Pr ions. With an increase in power of the 1400 nm laser from ∼34 to ∼136 mW, the spectral bandwidth of the 605 nm emission decreased and the intensity of the 605 nm emission increased monotonically, indicating the generation of 605 nm amplified spontaneous emission (ASE).

Watt-level 815 nm lasing from Tm-doped fluorotellurite glass fibers.

Tm-doped fluorotellurite fibers based on TeO-BaF-YO(TBY) glasses were fabricated by using a rod-in-tube method. By using an 81 cm-long Tm-doped fluorotellurite fiber as the gain medium and a 1400 / 1570 nm dual-wavelength pump technique, lasing at 815 nm was obtained for a threshold pump power of 629 mW at 1400 nm and a fixed pump power of 960 mW at 1570 nm. As the 1400 nm pump power is increased to 1803 mW, the obtained maximum output power was about 1616 mW.

Thulium-doped fluorotellurite glass fibers for broadband S-band amplifiers.

We demonstrated broadband S-band (1460-1530 nm) amplification in Tm-doped fluorotellurite glass fibers (TDFTFs) by using a 1400/1570 nm dual-wavelength pump technique. TDFTFs based on TeO-BaF-YO (TBY) glass were fabricated by using a rod-in-tube method. For an input signal power of 0 dBm (or 1 mW), a broadband positive net gain ranging from <1440 nm to 1546 nm was achieved in a 1.

Directly Linking Low-Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates.

A new growth method to make highly oriented GaAs thin films on flexible metal substrates has been developed, enabling roll-to-roll manufacturing of flexible semiconductor devices. The grains are oriented in the <001> direction with <1° misorientations between them, and they have a comparable mobility to single-crystalline GaAs at high doping concentrations. At the moment, the role of low-angle grain boundaries (LAGBs) on device performance is unknown.

[Genetic alteration of p16 gene in oral and maxillofacial squamous cell carcinomas].

Objective: To detect p16 gene alteration in oral and maxillofacial squamous cell carcinomas (OMSCC) and its relation with this tumor type.

Methods: To examine 33 paraffin-embedded cases of primary oral and maxillofacial squamous cell carcinoma by PCR-SSCP method and analyze relationship of p16 gene alteration with clinical stages, histological grades, lymphatic metastasis in OMSCC.

Results: It revealed 9 of 33(27%) with p16 gene change including 7 (21%) homozygous deletions and 2 (6%) point mutations.