Integrated Multifunctional Electronic Skins with Low-Coupling for Complicated and Accurate Human-Robot Collaboration.

Multifunctional capability and low coupling electronic skin (e-skin) is of great significance in advanced robot systems interacting with the human body or the external environment directly. Herein, a multifunctional e-skin system via vertical integrated different sensing materials and structures is presented. The multifunctional e-skin has capacity sensing the proximity, pressure, temperature, and relative humidity simultaneously, with scope of 100-0 mm, 0-30 N, 20-120 °C and 20-70%, respectively.

Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts.

Self-powered photodetectors with great potential for implanted medical diagnosis and smart communications have been severely hindered by the difficulty of simultaneously achieving high sensitivity and fast response speed. Here, we report an ultrafast and highly sensitive self-powered photodetector based on two-dimensional (2D) InSe, which is achieved by applying a device architecture design and generating ideal Schottky or ohmic contacts on 2D layered semiconductors, which are difficult to realize in the conventional semiconductors owing to their surface Fermi-level pinning. The as-fabricated InSe photodiode features a maximal lateral self-limited depletion region and a vertical fully depleted channel.

Asymmetrically synchronous reduction and assembly of graphene oxide film on metal foil for moisture responsive actuator.

Graphene has drawn tremendous attention for the fabrication of actuators because of its unique chemical and structural features. Traditional graphene actuators need integration with polymers or other responsive components for shape-changeable behaviour. Searching for a sole material with asymmetric properties is difficult and challenging for actuators that are responsive to external stimulus.

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates.

To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO/Si) substrate using methanol as the only carbon source.