Modeling for High-Frequency Spurious Responses in Incredible High-Performance Surface Acoustic Wave Devices.

To ensure that surface acoustic wave (SAW) filters fulfill the requirements of Carrier Aggregation (CA) applications, the development of modeling tools that can forecast and simulate high-frequency spurious responses has been necessary. This paper presents an advanced methodology for extending the coupling-of-modes (COM) model to obtain precise modeling of the high-frequency spurious responses of incredible high-performance surface acoustic wave (I.H.

An Infrared Near-Sensor Reservoir Computing System Based on Large-Dynamic-Space Memristor with Tens of Thousands of States for Dynamic Gesture Perception.

To efficiently process the massive amount of sensor data, it is demanding to develop a new paradigm. Inspired by neurobiological systems, an infrared near-senor reservoir computing (RC) system, consisting of infrared sensors and memristors based on single-crystalline LiTaO and LiNbO (LN) thin film respectively, is demonstrated. The analog memristor is used as a reservoir in the RC system to process sensor signals with spatiotemporal characteristics.

Designed Structures of Interdigital Electrodes for Thin Film SAW Devices.

This paper studied the impact of the microstructure of interdigital electrodes on the performance of surface acoustic wave (SAW) resonators and proposed an innovative piston, dummy finger and tilt (PDT) structure, which was then applied to the GLONASS L3 band filters. Through the adoption of 3D finite element simulation (FEM), photolithography, and testing on an incredible high-performance surface acoustic wave (I.H.

Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor.

To achieve the goal of neuromorphic computing hardware implementation with extremely high efficiency, low power consumption, and high density, it is necessary to develop transistor-free memristors and implement differential operation without subtraction circuits. In this study, argon ion irradiation was used during the fabrication process of a single crystalline LiNbO (LN) thin film to controllably introduce oxygen vacancies (OVs) into the bottom surface, which realized the modulation of OVs based on the excellent environment provided by a single-crystalline thin film. The memristive behavior of memristors was then modulated by regulating the distribution of OVs, and the effect of OVs distributed near the bottom surface of the single crystalline LN thin film on the memristive behavior was analyzed.

Defect Detection Algorithm for Wing Skin with Stiffener Based on Phased-Array Ultrasonic Imaging.

In response to the real-time imaging detection requirements of structural defects in the R region of rib-stiffened wing skin, a defect detection algorithm based on phased-array ultrasonic imaging for wing skin with stiffener is proposed. We select the full-matrix-full-focusing algorithm with the best imaging quality as the prototype for the required detection algorithm. To address the problem of poor real-time performance of the algorithm, a sparsity-based full-focusing algorithm with symmetry redundancy imaging mode is proposed.

Dual functional states of working memory realized by memristor-based neural network.

Working memory refers to the brain's ability to store and manipulate information for a short period. It is disputably considered to rely on two mechanisms: sustained neuronal firing, and "activity-silent" working memory. To develop a highly biologically plausible neuromorphic computing system, it is anticipated to physically realize working memory that corresponds to both of these mechanisms.

BAW Resonator with an Optimized SiO/TaO Reflector for 5G Applications.

In the present work, a lithium niobate (LN) 43°Y cut LN film is transferred onto a substrate with 11 layers of SiO/TaO and solidly mounted resonators with a reflector are successfully fabricated with the multilayer structure. The design method and fabrication process are demonstrated. The finite element model and the Mason model are used.

Wide Band BAW Filter Based on Single-Crystalline LiNbO₃ Thin Film With Insulating Bragg Reflector.

Bulk acoustic wave (BAW) filter with large bandwidth is an urgent need in fifth-generation (5G) communication systems. In the present work, 43° Y-cut lithium niobate (LN) single-crystal film is prepared on multilayer oxide film, and bulk acoustic filter with oxide Bragg reflector (BR) is successfully achieved. The design method of the filter and the fabrication process are presented.

A Solidly Mounted Resonator Fabricated by LiNbO Single-Crystalline Film on Flexible Polyimide Substrate.

A solidly mounted resonator on flexible polyimide (PI) substrate with high-effective coupling coefficient ( K ) of 14.06% is reported in this article. This high K is resulting from the LiNbO (LN) single-crystalline film and [SiO/Mo] Bragg reflector.

Investigation of the Temperature Fluctuation of Single-Phase Fluid Based Microchannel Heat Sink.

The temperature fluctuation in a single-phase microchannel heat sink (MCHS) is investigated using the integrated temperature sensors with deionized water as the coolant. Results show that the temperature fluctuation in single phase is not negligible. The causes of the temperature fluctuation are revealed based on both simulation and experiment.

A Comprehensive Study of a Micro-Channel Heat Sink Using Integrated Thin-Film Temperature Sensors.

A micro-channel heat sink is a promising cooling method for high power integrated circuits (IC). However, the understanding of such a micro-channel device is not sufficient, because the tools for studying it are very limited. The details inside the micro-channels are not readily available.

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOF with AgF Nanoparticles.

Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiOF/Ti/Pt stack with extremely low switch-on voltage of 0.07 V.

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C.