Adjusting Microscale to Atomic-Scale Structural Order in PbS Nanocrystal Superlattice for Enhanced Photodetector Performance.

An investigation is presented into the effect of the long-range order on the optoelectronic properties of PbS quantum dot (QD) superlattices, which form mesocrystals, for potential use in photodetector applications. By self-assembly of QD nanocrystals on an Si/SiO substrate, a highly ordered and densely packed PbS QD superlattice with a microscale size is obtained. The results demonstrate that annealing treatment induces mesocrystalline superlattices with preferred growth orientation, achieved by dislodging ligands.

Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging.

Broadband photodetectors are a category of optoelectronic devices that have important applications in modern communication information. γ-InSe is a newly developed two-dimensional (2D) layered semiconductor with an air-stable and low-symmetry crystal structure that is suitable for polarization-sensitive photodetection. Herein, we report a P-N photodiode based on 3D Ge/2D γ-InSe van der Waals heterojunction (vdWH).

Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics.

Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment low-pressure physical vapor deposition (LPPVD) and dry transfer method.

A high-responsivity CsPbBr nanowire photodetector induced by CdS@CdZnS gradient-alloyed quantum dots.

Benefitting from excellent thermal and moisture stability, inorganic halide perovskite materials have established themselves quickly as promising candidates for fabricating photoelectric devices. However, due to their high trap state density and rapid carrier recombination rate, the photoelectric conversion efficiencies of current inorganic halide perovskite materials are still lower than expected. Here, after systematic research on the optoelectronic properties of CsPbBr nanowires (NWs) decorated with binary CdS quantum dots (QDs), CdS@ZnS core/shell QDs, and gradient-alloyed CdS@CdZnS QDs, respectively, we proposed a facile method to improve the quantum efficiency of perovskite-based photodetectors with low cost, in which the aforementioned QDs are firstly integrated with CsPbBr NWs, which act as a photosensitive layer.