Reducing contact resistance in graphene devices through contact area patterning.

Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are oriented normal to the channel and facilitate bonding between the contact metal and carbon atoms at the graphene cut edges, reproducibly maximizing "edge-contacted" injection.

Three-terminal graphene negative differential resistance devices.

A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene devices based on a field-effect transistor configuration. This NDR effect is a universal phenomenon for graphene and is demonstrated in devices fabricated with different types of graphene materials and gate dielectrics. Operation of conventional NDR devices is usually based on quantum tunneling or intervalley carrier transfer, whereas the NDR behavior observed here is unique to the ambipolar behavior of zero-bandgap graphene and is associated with the competition between electron and hole conduction as the drain bias increases.

Semiconducting perovskites (2-XC6H4C2H4NH3)2SnI4 (X = F, Cl, Br): steric interaction between the organic and inorganic layers.

Two new semiconducting hybrid perovskites based on 2-substituted phenethylammonium cations, (2-XC(6)H(4)C(2)H(4)NH(3))(2)SnI(4) (X = Br, Cl), are characterized and compared with the previously reported X = F compound, with a focus on the steric interaction between the organic and inorganic components. The crystal structure of (2-ClC(6)H(4)C(2)H(4)NH(3))(2)SnI(4) is solved in a disordered subcell [C2/m, a = 33.781(7) A, b = 6.

High-performance, solution-processed organic thin film transistors from a novel pentacene precursor.

The Lewis acid-catalyzed Diels-Alder reaction of the organic semiconductor pentacene with N-sulfinylacetamide yields a soluble adduct. Spin-coated thin films of this adduct undergo solid-phase conversion to form thin films of pentacene at moderate temperatures. Organic thin film transistors fabricated by spin-coating this adduct, followed by thermal conversion to pentacene, exhibit the highest mobility reported to date for a solution-processed organic semiconductor.