Spin defects in hexagonal boron nitride (hBN), particularly negatively charged boron vacancy centers, are gaining attention for their potential in quantum sensing applications.
This study focuses on engineering spin defects in boron nitride nanotubes (BNNTs), showing that these defects can be distributed along and around the nanotubes.
The unique tubular structure of BNNTs allows for better control and placement of these spin defects, promising advancements in high-resolution sensing technologies and further understanding of spin defect behavior in hBN.