Fabrication of buckling free ultrathin silicon membranes by direct bonding with thermal difference.

An innovative method to fabricate large area (up to several squared millimeters) ultrathin (100 nm) monocrystalline silicon (Si) membranes is described. This process is based on the direct bonding of a silicon-on-insulator wafer with a preperforated silicon wafer. The stress generated by the thermal difference applied during the bonding process is exploited to produce buckling free silicon nanomembranes of large areas.