Spectral Emissivity and Thermal Conductivity Properties of Black Aluminum Films.

Black aluminum is a material characterized by high surface porosity due to columnar growth and exhibits unique optical properties that make it attractive for applications such as light trapping, infrared detection, and passive thermal radiation cooling. In this study, we correlate the structural and optical properties of black aluminum by comparing it with conventional reflective aluminum layers. These layers of varying thicknesses were deposited on fused silica substrates, and their optical properties were analyzed.

Tuning the Transparency Window of SrVO Transparent Conducting Oxide.

Correlated transparent conducting oxides (TCOs) have gained great attention, because of their unique combination of transparency and metallic character. SrVO (SVO) was identified as a high-performance TCO in the visible range. Few studies have investigated band structure engineering through chemical doping to enhance the optical properties of SVO.

Correction: Photoluminescence modification of europium(III)-doped MAlO (M = Zn, Mg) spinels induced by Ag@SiO core-shell nanoparticles.

Correction for 'Photoluminescence modification of europium(III)-doped MAlO (M = Zn, Mg) spinels induced by Ag@SiO core-shell nanoparticles' by Rodrigo A. Valenzuela-Fernández , , 2024, https://doi.org/10.

Photoluminescence modification of europium(III)-doped MAlO (M = Zn, Mg) spinels induced by Ag@SiO core-shell nanoparticles.

In recent years, there has been an increasing interest in developing new inorganic compounds with exceptional properties for advanced materials. Specifically, compounds containing europium have attracted much attention due to their luminescent properties. These compounds are used in electronics, biotechnology, medicine, and catalysis.

Artificial Aging of Thin Films of the Indium-Free Transparent Conducting Oxide SrVO.

SrVO (SVO) is a prospective candidate to replace the conventional indium tin oxide (ITO) among the new generation of transparent conducting oxide (TCO) materials. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150-250 °C range and under ambient environment in order to explore the chemical stability of this material. The use of these relatively low temperatures speeds up the natural aging of the films and allows following the evolution of their related properties.

Er:KYF laser at 2.80 µm.

We report on the mid-infrared laser operation of a cubic 15 at.% : crystal. In the quasi-continuous-wave regime, the peak power reaches 255 mW at 2.

Identification of (Tb,Eu)(SiO)O Oxy-Apatite Structures as Nanometric Inclusions in Annealed (Eu,Tb)-Doped ZnO/Si Junctions: Combined Electron Diffraction and Chemical Contrast Imaging Studies.

(Tb,Eu)-doped ZnO-annealed films at 1100 °C showed intense photoluminescense (PL) emission from Eu and Tb ions. The high-temperature annealing led to a chemical segregation and a secondary Zn-free phase formation that is suspected to be responsible for the high PL intensity. Large faceted inclusions of rare-earth (RE) silicates of a size of few hundred nanometers were observed.

Simultaneous detection of trace Ag(I) and Cu(II) ions using homoepitaxially grown GaN micropillar electrode.

Driven by the motivation to quantitively control and monitor trace metal ions in water, the development of environmental-friendly electrodes with superior detection sensitivity is extremely important. In this work, we report the design of a stable, ultrasensitive and biocompatible electrode for the detection of trace Ag and Cu ions by growing n-type GaN micropillars on conductive p-type GaN substrate. The electrochemical measurement based on cyclic voltammetry indicates that the GaN micropillars exhibit quasi-reversible and mass-controlled reaction in redox probe solution.

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation.

Layered crystalline ZnInS nanosheets: CVD synthesis and photo-electrochemical properties.

Two-dimensional semiconductors with layer thicknesses of a few nanometers to tens of nanometers have attracted tremendous research interest due to their fascinating electrical, optical, and optoelectronic properties and technologically important applications. In this work, two dimensional ternary ZnInS nanosheets which self-assemble into microflowers have been synthesized through a feasible chemical vapour deposition process. High-resolution transmission electron microscope (HRTEM) analysis reveals that the ZnInS nanostructure exhibits an extremely high phase purity and a single crystal nature free of dislocations, stacking faults or twins.

Microstructure and optical properties of Pr3+-doped hafnium silicate films.

In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, while the emission properties have been studied by means of photoluminescence (PL) and PL excitation (PLE) spectroscopies. It was observed that a post-annealing treatment favors the phase separation in hafnium silicate matrix being more evident at 950°C.

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions.

We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiOx) layers. The effects of both the active layer thickness and the Si-excess content on the electrical excitation of erbium are studied.

Thickness-dependent optimization of Er3+ light emission from silicon-rich silicon oxide thin films.

This study investigates the influence of the film thickness on the silicon-excess-mediated sensitization of Erbium ions in Si-rich silica. The Er3+ photoluminescence at 1.5 μm, normalized to the film thickness, was found five times larger for films 1 μm-thick than that from 50-nm-thick films intended for electrically driven devices.