Surface-induced optimal packing of two-dimensional molecular networks.

High-density packing in organic crystals is usually associated with an increase of the coordination between molecules. Such a concept is not necessarily extended to two-dimensional molecular networks self-assembled on a solid surface, for which we demonstrate the key role of the surface in inducing the optimal packing. By a combination of scanning tunneling microscopy experiments and multiscale computer simulations, we study the phase transition between two polymorphs.

Nanoscale carrier multiplication mapping in a Si diode.

Carrier multiplication (CM), the creation of electron-hole pairs from an excited electron, has been investigated in a silicon p-n junction by multiple probe scanning tunneling microscopy. The technique enables an unambiguous determination of the quantum yield based on the direct measurement of both electron and hole currents that are generated by hot tunneling electrons. The combined effect of impact ionization, carrier diffusion, and recombination is directly visualized from the spatial mapping of the CM efficiency.

Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning.

Silicon nanostructure patterning with tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears to be an efficient tool for precise nanofabrication. Here, we investigate the stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) at both the experimental and the theoretical levels.

Effects of strain on the carrier mobility in silicon nanowires.

We investigate electron and hole mobilities in strained silicon nanowires (Si NWs) within an atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very responsive to strain and can be enhanced or reduced by a factor >2 (up to 5×) for moderate strains in the ± 2% range. The effects of strain on the transport properties are, however, very dependent on the orientation of the nanowires.

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories.

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled.