The FeCrNi alloy, whose composition is close to that of stainless steel 304, was prepared by electrodeposition and characterized. Nanocrystalline FeCrNi (nc-FeCrNi) was obtained by employing a double-compartment cell where the anode is separated from the cathode compartment, while amorphous FeCrNi (a-FeCrNi) was deposited in a conventional single electrochemical cell. The carbon content of nc-FeCrNi was found to be significantly lower than that of a-FeCrNi, suggesting that carbon inclusion is responsible for the change in the microstructure.
View Article and Find Full Text PDFBackground: Current cardiopulmonary resuscitation (CPR) guidelines recommend airway management and ventilation whilst minimising interruptions to chest compressions. We have assessed i-gel™ use during CPR.
Methods: In an observational study of i-gel™ use during CPR we assessed the ease of i-gel™ insertion, adequacy of ventilation, the presence of a leak during ventilation, and whether ventilation was possible without interrupting chest compressions.
A new experimental approach for the characterization of the diametrical elastic modulus of individual nanowires is proposed by implementing a micro/nanoscale diametrical compression test geometry, using a flat punch indenter. A 250 nm diameter single crystal silicon nanowire is compressed inside of a scanning electron microscope. Since silicon is highly anisotropic, the wire crystal orientation in the compression axis is determined by electron backscatter diffraction.
View Article and Find Full Text PDFWe present a novel minimally invasive postprocessing method for catalyst templating based on focused charged particle beam structuring, which enables a localized vapor-liquid-solid (VLS) growth of individual nanowires on prefabricated three-dimensional micro- and nanostructures. Gas-assisted focused electron beam induced deposition (FEBID) was used to deposit a SiO(x) surface layer of about 10 × 10 μm(2) on top of a silicon atomic force microscopy cantilever. Gallium focused ion beam (FIB) milling was used to make a hole through the SiO(x) layer into the underlying silicon.
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