Button shear testing for adhesion measurements of 2D materials.

Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration.

Current-Limited Conductive Atomic Force Microscopy.

Conductive atomic force microscopy (CAFM) has become the preferred tool of many companies and academics to analyze the electronic properties of materials and devices at the nanoscale. This technique scans the surface of a sample using an ultrasharp conductive nanoprobe so that the contact area between them is very small (<100 nm) and it can measure the properties of the sample with a very high lateral resolution. However, measuring relatively low currents (∼1 nA) in such small areas produces high current densities (∼1000 A/cm), which almost always results in fast nanoprobe degradation.

Solid Platinum Nanoprobes for Highly Reliable Conductive Atomic Force Microscopy.

Conductive atomic force microscopy (CAFM) is a powerful technique to investigate electrical and mechanical properties of materials and devices at the nanoscale. However, its main challenge is the reliability of the probe tips and their interaction with the samples. The most common probe tips used in CAFM studies are made of Si coated with a thin (∼20 nm) film of Pt or Pt-rich alloys (such as Pt/Ir), but this can degrade fast due to high current densities (>10A/cm) and mechanical frictions.

Investigation of Heater Structures for Thermal Conductivity Measurements of SiO and AlO Thin Films Using the 3-Omega Method.

A well-known method for measuring thermal conductivity is the 3-Omega (3) method. A prerequisite for it is the deposition of a metal heater on top of the sample surface. The known design rules for the heater geometry, however, are not yet sufficient.

Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution.

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films.

On the Limits of Scanning Thermal Microscopy of Ultrathin Films.

Heat transfer processes in micro- and nanoscale devices have become more and more important during the last decades. Scanning thermal microscopy (SThM) is an atomic force microscopy (AFM) based method for analyzing local thermal conductivities of layers with thicknesses in the range of several nm to µm. In this work, we investigate ultrathin films of hexagonal boron nitride (h-BN), copper iodide in zincblende structure (γ-CuI) and some test sample structures fabricated of silicon (Si) and silicon dioxide (SiO) using SThM.