Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge.

Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary oxides. Bulk switching was found experimentally in different oxides, for example in amorphous gallium oxide.

Publisher Correction: Nanoscale percolation in doped BaZrO for high proton mobility.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Nanoscale percolation in doped BaZrO for high proton mobility.

Acceptor-doped barium zirconate is a promising proton-conducting oxide for various applications, for example, electrolysers, fuel cells or methane-conversion cells. Despite many experimental and theoretical investigations there is, however, only a limited understanding as to how to connect the complex microscopic proton motion and the macroscopic proton conductivity for the full range of acceptor levels, from diluted acceptors to concentrated solid solutions. Here we show that a combination of density functional theory calculations and kinetic Monte Carlo simulations enables this connection.