InGaN/GaN double heterostructures and multiquantum wells (MQWs) have been successfully developed since more than 20 years for LED lightning applications. Recent developments show that state-of-the-art LEDs benefit from artificially generated V-pit defects. However, the control of structural and chemical properties plays a tremendous role.
View Article and Find Full Text PDFThis paper describes the application of phosphor-based light conversion for its use in optogenetic experiments to tailor the wavelength of light emitted from implantable miniaturized light sources. Gallium-nitride-based blue light-emitting diodes are used in combination with orthosilicate phosphor immersed in an epoxy matrix and emitting in the yellow wavelength range. The miniaturization of the phosphor-containing polymer droplets toward diameters as small as 300 μm provides the compatibility with implantable optical probes.
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