High-Q and high finesse silicon microring resonator.

We demonstrate the design, fabrication, and experimental characterization of a single transverse mode adiabatic microring resonator (MRR) implemented using the silicon-on- insulator (SOI) platform using local oxidation of silicon (LOCOS) approach. Following its fabrication, the device was characterized experimentally and an ultrahigh intrinsic Q-factor of ∼2 million with a free spectral range (FSR) of 2 nm was achieved, giving rise to a finesse of ∼1100, the highest demonstrated so far in SOI platform at the telecom band. We have further studied our device to analyze the source of losses that occur in the MRR and to understand the limits of the achievable Q-factor.

CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance.

The impending collapse of Moore-like growth of computational power has spurred the development of alternative computing architectures, such as optical or electro-optical computing. However, many of the current demonstrations in literature are not compatible with the dominant complementary metal-oxide semiconductor (CMOS) technology used in large-scale manufacturing today. Here, inspired by the famous Esaki diode demonstrating negative differential resistance (NDR), we show a fully CMOS-compatible electro-optical memory device, based on a new type of NDR diode.

On-chip multivariant COVID 19 photonic sensor based on silicon nitride double-microring resonators.

Coronavirus disease 2019 (COVID-19) is a newly emerging human infectious disease that continues to develop new variants. A crucial step in the quest to reduce the infection is the development of rapid and reliable virus detectors. Here, we report a chip scale photonic sensing device consisting of a silicon-nitride double microring resonator (MRR) for detecting SARS-CoV-2 in clinical samples.

MoSe/WS heterojunction photodiode integrated with a silicon nitride waveguide for near infrared light detection with high responsivity.

We demonstrate experimentally the realization and the characterization of a chip-scale integrated photodetector for the near-infrared spectral regime based on the integration of a MoSe/WS heterojunction on top of a silicon nitride waveguide. This configuration achieves high responsivity of ~1 A W at the wavelength of 780 nm (indicating an internal gain mechanism) while suppressing the dark current to the level of ~50 pA, much lower as compared to a reference sample of just MoSe without WS. We have measured the power spectral density of the dark current to be as low as ~1 × 10 A Hz, from which we extract the noise equivalent power (NEP) to be ~1 × 10 W Hz.

Ultra-high-Q substrate-mode coupled resonances in complementary THz metamaterial.

Achieving high-Q resonances in the THz frequency range is significant for applications such as sensors, filters, and emitters. A promising approach for obtaining such resonances is by using metamaterials. However, high-Q resonances in THz metamaterials are usually limited by metallic radiation losses in the meta-atoms.

MEMS cantilever-controlled plasmonic colors for sustainable optical displays.

Conventional optical displays using indium tin oxide and liquid crystal materials present challenges for long-term sustainability. We show here a cost-effective and complementary metal-oxide semiconductor (CMOS)-compatible fast and full-range electrically controlled RGB color display. This is achieved by combining transmission-based plasmonic metasurfaces with MEMS (microelectromechanical systems) technology, using only two common materials: aluminum and silicon oxide.

Optical reconfiguration and polarization control in semi-continuous gold films close to the percolation threshold.

Controlling and confining light by exciting plasmons in resonant metallic nanostructures is an essential aspect of many new emerging optical technologies. Here we explore the possibility of controllably reconfiguring the intrinsic optical properties of semi-continuous gold films, by inducing permanent morphological changes with a femtosecond (fs)-pulsed laser above a critical power. Optical transmission spectroscopy measurements show a correlation between the spectra of the morphologically modified films and the wavelength, polarization, and the intensity of the laser used for alteration.

Enhancement of two-photon photoluminescence and SERS for low-coverage gold films.

Electromagnetic field enhancement (FE) effects occurring in thin gold films 3-12-nm are investigated with two-photon photoluminescence (TPL) and Raman scanning optical microscopies. The samples are characterized using scanning electron microscopy images and linear optical spectroscopy. TPL images exhibit a strong increase in the level of TPL signals for films thicknesses 3-8-nm, near the percolation threshold.

Surface-dominated transport on a bulk topological insulator.

Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, it is challenging to achieve surface-dominated transport. Here we use nanoscale four-point setups with a variable contact distance on an atomically clean surface of bulk-insulating Bi2Te2Se.