Dry Etching Characteristics of InGaZnO Thin Films Under Inductively Coupled Plasma-Reactive-Ion Etching with Hydrochloride and Argon Gas Mixture.

Inductively coupled plasma-reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according to radiofrequency bias power, gas mixing ratio, and chamber pressure. The IGZO film showed an excellent etch rate of 83.